纳米铜浆连接铜阵列锥形微结构的烧结与优化

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-06 DOI:10.1016/j.mssp.2024.109081
Hongliang Lyu , Cong Wang , Kai Li , Xianshi Jia , Jiahua He , Dejin Yan , Nai Lin , Ji'an Duan
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引用次数: 0

摘要

随着三维集成技术的发展,电路的集成密度和运行速度不断提高。因此,对互连可靠性的要求也相应提高。然而,传统的互连工艺和材料已无法满足互连可靠性的要求。本研究通过在纳米铜涂层材料中使用不同比例的有机化合物来优化互连材料。使用飞秒激光和二次热涂层加工微/纳米结构,以提高互连工艺。首先,为确保加工效率,我们利用飞秒激光制造出表面接触面积更大的微/纳米结构。随后,我们利用不同摩尔比的抗坏血酸和苯并咪唑制备铜(Cu)浆料,分析它们对纳米铜粒子的分散性和球形度以及互连的剪切强度的影响。理想的组合可得到分散良好的球形纳米铜粒子,纳米铜浆的平均剪切强度约为 38 兆帕。此外,通过使用二次热涂层的飞秒激光铜互连烧结工艺实现了优化,使表面微结构的未填充率从 35.31 % 降至 11.25 %,铜互连强度从 31.42 MPa 提高到 43.65 MPa。最后,利用有限元模拟分析研究了铜互连在运行过程中的温度和应力分布,并预测了其在热循环条件(-50 ℃-300 ℃)下的使用寿命。结果表明,烧结结构的可靠性符合运行要求。
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Sintering and optimization of copper nanopaste-connected copper array conical microstructures
With the advancement of 3D integration technology, the integration density and operational speed of circuits continue to increase. Consequently, there is a corresponding rise in the demand for interconnection reliability. However, traditional interconnection processes and materials are no longer able to meet the requirements for interconnection reliability. This study optimized the interconnection material by utilizing different ratios of organic compounds in nano-copper coating materials. Micro/nanostructures were processed using femtosecond laser and secondary thermal coating to enhance the interconnection process. Firstly, to ensure processing efficiency, we utilized femtosecond laser to create micro/nanostructures with increased surface contact area. Subsequently, varying molar ratios of ascorbic acid and benzimidazole were utilized in the preparation of copper (Cu) pastes to analyze their impact on the dispersion and sphericity of the copper nanoparticles and the shear strength of the interconnections. The ideal combination resulted in well-dispersed spherical copper nanoparticles, copper nano paste with an average shear strength of about 38 MPa was obtained. In addition, optimization was achieved through the femtosecond laser copper interconnection sintering process using a secondary heat coating, which reduced the unfilled rate of surface microstructures from 35.31 % to 11.25 % and increased the copper interconnection strength from 31.42 MPa to 43.65 MPa. Finally, finite element simulation analysis was employed to study the temperature and stress distribution of the copper interconnect during operation and to predict its service life under thermal cycling conditions (−50 °C–300 °C). The results demonstrated that the reliability of the sintered structure meets operational requirements.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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