Hongliang Lyu , Cong Wang , Kai Li , Xianshi Jia , Jiahua He , Dejin Yan , Nai Lin , Ji'an Duan
{"title":"纳米铜浆连接铜阵列锥形微结构的烧结与优化","authors":"Hongliang Lyu , Cong Wang , Kai Li , Xianshi Jia , Jiahua He , Dejin Yan , Nai Lin , Ji'an Duan","doi":"10.1016/j.mssp.2024.109081","DOIUrl":null,"url":null,"abstract":"<div><div>With the advancement of 3D integration technology, the integration density and operational speed of circuits continue to increase. Consequently, there is a corresponding rise in the demand for interconnection reliability. However, traditional interconnection processes and materials are no longer able to meet the requirements for interconnection reliability. This study optimized the interconnection material by utilizing different ratios of organic compounds in nano-copper coating materials. Micro/nanostructures were processed using femtosecond laser and secondary thermal coating to enhance the interconnection process. Firstly, to ensure processing efficiency, we utilized femtosecond laser to create micro/nanostructures with increased surface contact area. Subsequently, varying molar ratios of ascorbic acid and benzimidazole were utilized in the preparation of copper (Cu) pastes to analyze their impact on the dispersion and sphericity of the copper nanoparticles and the shear strength of the interconnections. The ideal combination resulted in well-dispersed spherical copper nanoparticles, copper nano paste with an average shear strength of about 38 MPa was obtained. In addition, optimization was achieved through the femtosecond laser copper interconnection sintering process using a secondary heat coating, which reduced the unfilled rate of surface microstructures from 35.31 % to 11.25 % and increased the copper interconnection strength from 31.42 MPa to 43.65 MPa. Finally, finite element simulation analysis was employed to study the temperature and stress distribution of the copper interconnect during operation and to predict its service life under thermal cycling conditions (−50 °C–300 °C). The results demonstrated that the reliability of the sintered structure meets operational requirements.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109081"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sintering and optimization of copper nanopaste-connected copper array conical microstructures\",\"authors\":\"Hongliang Lyu , Cong Wang , Kai Li , Xianshi Jia , Jiahua He , Dejin Yan , Nai Lin , Ji'an Duan\",\"doi\":\"10.1016/j.mssp.2024.109081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>With the advancement of 3D integration technology, the integration density and operational speed of circuits continue to increase. Consequently, there is a corresponding rise in the demand for interconnection reliability. However, traditional interconnection processes and materials are no longer able to meet the requirements for interconnection reliability. This study optimized the interconnection material by utilizing different ratios of organic compounds in nano-copper coating materials. Micro/nanostructures were processed using femtosecond laser and secondary thermal coating to enhance the interconnection process. Firstly, to ensure processing efficiency, we utilized femtosecond laser to create micro/nanostructures with increased surface contact area. Subsequently, varying molar ratios of ascorbic acid and benzimidazole were utilized in the preparation of copper (Cu) pastes to analyze their impact on the dispersion and sphericity of the copper nanoparticles and the shear strength of the interconnections. The ideal combination resulted in well-dispersed spherical copper nanoparticles, copper nano paste with an average shear strength of about 38 MPa was obtained. In addition, optimization was achieved through the femtosecond laser copper interconnection sintering process using a secondary heat coating, which reduced the unfilled rate of surface microstructures from 35.31 % to 11.25 % and increased the copper interconnection strength from 31.42 MPa to 43.65 MPa. Finally, finite element simulation analysis was employed to study the temperature and stress distribution of the copper interconnect during operation and to predict its service life under thermal cycling conditions (−50 °C–300 °C). The results demonstrated that the reliability of the sintered structure meets operational requirements.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"186 \",\"pages\":\"Article 109081\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124009776\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124009776","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Sintering and optimization of copper nanopaste-connected copper array conical microstructures
With the advancement of 3D integration technology, the integration density and operational speed of circuits continue to increase. Consequently, there is a corresponding rise in the demand for interconnection reliability. However, traditional interconnection processes and materials are no longer able to meet the requirements for interconnection reliability. This study optimized the interconnection material by utilizing different ratios of organic compounds in nano-copper coating materials. Micro/nanostructures were processed using femtosecond laser and secondary thermal coating to enhance the interconnection process. Firstly, to ensure processing efficiency, we utilized femtosecond laser to create micro/nanostructures with increased surface contact area. Subsequently, varying molar ratios of ascorbic acid and benzimidazole were utilized in the preparation of copper (Cu) pastes to analyze their impact on the dispersion and sphericity of the copper nanoparticles and the shear strength of the interconnections. The ideal combination resulted in well-dispersed spherical copper nanoparticles, copper nano paste with an average shear strength of about 38 MPa was obtained. In addition, optimization was achieved through the femtosecond laser copper interconnection sintering process using a secondary heat coating, which reduced the unfilled rate of surface microstructures from 35.31 % to 11.25 % and increased the copper interconnection strength from 31.42 MPa to 43.65 MPa. Finally, finite element simulation analysis was employed to study the temperature and stress distribution of the copper interconnect during operation and to predict its service life under thermal cycling conditions (−50 °C–300 °C). The results demonstrated that the reliability of the sintered structure meets operational requirements.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.