{"title":"通过磁性和非磁性双重掺杂提高 CuCrO2 晶体的塞贝克系数:阳离子影响研究","authors":"Jamshina Sanam P.K., P.P. Pradyumnan","doi":"10.1016/j.mssp.2024.109058","DOIUrl":null,"url":null,"abstract":"<div><div>The manipulation of thermoelectric properties through doping strategies offers a promising route to optimize material performance. Here we explore the effects of magnetic and non-magnetic dual cation doping (Zn and Ni) on the Seebeck coefficient of CuCrO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> crystallites. Examining how lattice structure changes with increasing dopant concentrations provides deeper insights, aiding in optimizing superior thermoelectric materials. XPS investigation explores and substantiates the alterations in lattice sites resulting from the variation of two dopants Zn and Ni. The lattice distortion favors the superexchange interaction mediated by the ferromagnetic phase and the upsurge in carriers, the plateau in the MR graph, and the moderated reduction after the steep decline of Seebeck coefficients after 450 K serve as indicators of the magnetic phase transition and structural modulation. Our findings reveal that magnetic dopants introduce spin-related effects, which modify carrier concentration and scattering processes, while non-magnetic dopants mainly affect the electronic band structure. It is intriguing that the sample exhibiting higher magnetic remanence (<span><math><msub><mrow><mi>M</mi></mrow><mrow><mi>r</mi></mrow></msub></math></span>) demonstrates the lowest electrical conductivity during the ferromagnetic phase, yet displays higher conductivity during the paramagnetic phase. In this context, achieving the right concentration is pivotal, and the sample doped with 0.4 wt% showcases enhanced conductivity of 2823 S/m and Seebeck coefficient of 421 <span><math><mrow><mi>μ</mi><mi>V/K</mi></mrow></math></span>, culminating in an impressive power factor of 456 <span><math><mrow><mi>μ</mi><msup><mrow><mi>W/mK</mi></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span> and ZT of 0.135 at 973 K.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109058"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhancing Seebeck coefficient through magnetic and non-magnetic dual doping in CuCrO2 crystallites: A study on cationic influence\",\"authors\":\"Jamshina Sanam P.K., P.P. 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The lattice distortion favors the superexchange interaction mediated by the ferromagnetic phase and the upsurge in carriers, the plateau in the MR graph, and the moderated reduction after the steep decline of Seebeck coefficients after 450 K serve as indicators of the magnetic phase transition and structural modulation. Our findings reveal that magnetic dopants introduce spin-related effects, which modify carrier concentration and scattering processes, while non-magnetic dopants mainly affect the electronic band structure. It is intriguing that the sample exhibiting higher magnetic remanence (<span><math><msub><mrow><mi>M</mi></mrow><mrow><mi>r</mi></mrow></msub></math></span>) demonstrates the lowest electrical conductivity during the ferromagnetic phase, yet displays higher conductivity during the paramagnetic phase. 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引用次数: 0
摘要
通过掺杂策略操纵热电特性为优化材料性能提供了一条大有可为的途径。在此,我们探讨了磁性和非磁性双阳离子掺杂(Zn 和 Ni)对 CuCrO2 晶体塞贝克系数的影响。通过研究晶格结构如何随着掺杂浓度的增加而变化,我们可以获得更深入的见解,从而有助于优化优良的热电材料。XPS 研究探索并证实了两种掺杂剂 Zn 和 Ni 的变化导致的晶格位点变化。晶格畸变有利于铁磁相介导的超交换相互作用,载流子的激增、磁共振图中的高原以及塞贝克系数在 450 K 后急剧下降后的缓和降低,都是磁性相变和结构调制的指标。我们的研究结果表明,磁性掺杂物引入了自旋相关效应,从而改变了载流子浓度和散射过程,而非磁性掺杂物则主要影响电子能带结构。耐人寻味的是,表现出较高磁性剩磁(Mr)的样品在铁磁阶段的电导率最低,但在顺磁阶段却表现出较高的电导率。在这种情况下,达到合适的浓度至关重要,掺杂 0.4 wt% 的样品显示出 2823 S/m 的增强电导率和 421 μV/K 的塞贝克系数,最终在 973 K 时达到令人印象深刻的 456 μW/mK2 功率因数和 0.135 ZT。
Enhancing Seebeck coefficient through magnetic and non-magnetic dual doping in CuCrO2 crystallites: A study on cationic influence
The manipulation of thermoelectric properties through doping strategies offers a promising route to optimize material performance. Here we explore the effects of magnetic and non-magnetic dual cation doping (Zn and Ni) on the Seebeck coefficient of CuCrO crystallites. Examining how lattice structure changes with increasing dopant concentrations provides deeper insights, aiding in optimizing superior thermoelectric materials. XPS investigation explores and substantiates the alterations in lattice sites resulting from the variation of two dopants Zn and Ni. The lattice distortion favors the superexchange interaction mediated by the ferromagnetic phase and the upsurge in carriers, the plateau in the MR graph, and the moderated reduction after the steep decline of Seebeck coefficients after 450 K serve as indicators of the magnetic phase transition and structural modulation. Our findings reveal that magnetic dopants introduce spin-related effects, which modify carrier concentration and scattering processes, while non-magnetic dopants mainly affect the electronic band structure. It is intriguing that the sample exhibiting higher magnetic remanence () demonstrates the lowest electrical conductivity during the ferromagnetic phase, yet displays higher conductivity during the paramagnetic phase. In this context, achieving the right concentration is pivotal, and the sample doped with 0.4 wt% showcases enhanced conductivity of 2823 S/m and Seebeck coefficient of 421 , culminating in an impressive power factor of 456 and ZT of 0.135 at 973 K.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.