PBEsol GGA 和 mBJ 电位对 A2BAuI6(A = K 或 Rb 或 Cs,B = Sc 或 Y)结构、电子、光学、弹性和热电性能的影响

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-15 DOI:10.1016/j.mssp.2024.109116
Nabeel Israr , Muhammad Awais Jehangir , Ammar M. Tighezza , Shamim Khan , G. Murtaza , Muhammad Saeed
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引用次数: 0

摘要

如今,透镜系统在光伏技术领域处于领先地位。为了实现可再生能源的持续应用,需要具有理想特性的新材料。本研究预测了六种可能对可再生能源应用非常有用的新材料。计算中使用了线性化增强平面波与局部轨道的全势垒方案,并使用 PBEsol GGA 和 mBJ 势垒来计算交换相关效应。计算了 A2BAuI6(A = K 或 Rb 或 Cs,B = Sc 或 Y)的结构和弹性参数,结果表明此类化合物稳定、具有韧性,并具有较高的弹性各向异性。利用 TB-mBJ + SOC 方法,通过对 A2BAuI6(A = K、Rb、Cs;B = Sc 或 Y)化合物的电带结构计算,确定其带隙分别为 1.25 eV、1.64 eV、1.24 eV、1.62 eV、1.25 eV 和 2.04 eV。计算出的化合物在其带中具有很大的分散性和最小的载流子有效质量。通过 Slack 方程计算出的所有计算化合物的晶格热导率(KL)分别为 0.29 × 1014 W/mK、0.31 × 1014 W/mK、0.29 × 1014 W/mK、0.31 × 1014 W/mK、0.39 × 1014 W/mK 和 0.29 × 1014 W/mK,这表明热电用途前景广阔。热电参数的计算,包括功率因数、塞贝克系数和优点系数,也是为了达到另一个预期目的,并证实了这些材料在热电设备中的潜在高用途。同样,长扩散长度、可调带隙、高迁移率、am-双极电荷传输和高吸收等可接受的质量特性也加强了这些化合物,使其更适合光伏应用。
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The effect of PBEsol GGA and mBJ potentials on the structural, electronic, optical, elastic and thermoelectric properties of A2BAuI6 (A = K or Rb or Cs, B = Sc or Y)
Perovskites systems are leading the photovoltaic technology now a days. For the consistent renewable energy applications new materials required with the desirable properties. In this work six new materials are being predicted which may be very useful for the renewable energy applications. The full potential scheme of linearized augmented plane wave with the local orbitals is used for the calculations with the PBEsol GGA and mBJ potentials for the exchange-correlation effects. The structural and elastic parameters of A2BAuI6 (A = K or Rb or Cs, B = Sc or Y) are computed, and the responses exhibits that such compounds are stable, have a ductile nature, and are described by a high elastic anisotropy. The bandgaps were identified via the electrical band structure computations for A2BAuI6 (A = K, Rb, Cs; B = Sc or Y) compounds as 1.25 eV, 1.64 eV, 1.24 eV, 1.62 eV, 1.25 eV and 2.04 eV with TB-mBJ + SOC approach. The calculated compounds have much dispersion in their bands and minimal carrier effective mass. Lattice thermal conductivity (KL) is computed via Slack's equation for all computed compounds are 0.29 × 1014 W/mK, 0.31 × 1014 W/mK, 0.29 × 1014 W/mK, 0.31 × 1014 W/mK, 0.39 × 1014 W/mK and 0.29 × 1014 W/mK, indicating a promising future for thermoelectric uses. The calculation of thermoelectric parameters, including the power factor, Seebeck coefficient, and figure of merit, serves another prospective purpose and confirms the potential high use of these materials in thermoelectric devices. Likewise, acceptable quality characteristics like long diffusion length, tunable band-gap, high mobility, am-bipolar charge transport, and high absorption reinforce these compounds which make them even more suitable for photovoltaic applications.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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