{"title":"Ag-Bi2S3 纳米复合材料对高灵敏度和选择性 Cl2 气体传感器的影响：合成、表征和气体传感性能","authors":"Gangadhar Bandewad , Chetan Kamble , Sunil Pawar","doi":"10.1016/j.sse.2024.109024","DOIUrl":null,"url":null,"abstract":"<div><div>The gas sensing capabilities of Bi<sub>2</sub>S<sub>3</sub> chalcogenide have been actively enhanced and explored revealing its potential for high-performance Cl<sub>2</sub> gas detection under different environmental conditions and sensing configurations. This work successfully synthesized Bi<sub>2</sub>S<sub>3</sub> material via the SILAR method and further enhanced its sensing capabilities by fabricating Ag-Bi<sub>2</sub>S<sub>3</sub> nanocomposite. Both pristine Bi<sub>2</sub>S<sub>3</sub> and Ag-Bi<sub>2</sub>S<sub>3</sub> nanocomposite films underwent comprehensive characterization utilizing techniques such as FESEM, EDX, XRD, XPS, and RAMAN to analyze their morphological, structural, and chemical properties. Gas sensing capabilities were evaluated across a temperature range of 26–350 °C and varying Cl<sub>2</sub> gas concentrations (0.1–50 ppm). The findings reveal that the Ag-Bi<sub>2</sub>S<sub>3</sub> sensor demonstrates notably superior Cl<sub>2</sub> sensing response, particularly at an operational temperature of 150 °C, suggesting its promising potential for Cl<sub>2</sub> detection. The LOD has been calculated for Ag-Bi<sub>2</sub>S<sub>3</sub> sensor showing results of 0.150 better than pristine Bi<sub>2</sub>S<sub>3.</sub> HOMO-LUMO and PCA analysis for sensors has been studied to understand their capabilities with different gas sensing.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"223 ","pages":"Article 109024"},"PeriodicalIF":1.4000,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of Ag-Bi2S3 nanocomposites for highly sensitive and selective Cl2 gas sensors: Synthesis, characterization, and gas sensing performance\",\"authors\":\"Gangadhar Bandewad , Chetan Kamble , Sunil Pawar\",\"doi\":\"10.1016/j.sse.2024.109024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The gas sensing capabilities of Bi<sub>2</sub>S<sub>3</sub> chalcogenide have been actively enhanced and explored revealing its potential for high-performance Cl<sub>2</sub> gas detection under different environmental conditions and sensing configurations. This work successfully synthesized Bi<sub>2</sub>S<sub>3</sub> material via the SILAR method and further enhanced its sensing capabilities by fabricating Ag-Bi<sub>2</sub>S<sub>3</sub> nanocomposite. Both pristine Bi<sub>2</sub>S<sub>3</sub> and Ag-Bi<sub>2</sub>S<sub>3</sub> nanocomposite films underwent comprehensive characterization utilizing techniques such as FESEM, EDX, XRD, XPS, and RAMAN to analyze their morphological, structural, and chemical properties. Gas sensing capabilities were evaluated across a temperature range of 26–350 °C and varying Cl<sub>2</sub> gas concentrations (0.1–50 ppm). The findings reveal that the Ag-Bi<sub>2</sub>S<sub>3</sub> sensor demonstrates notably superior Cl<sub>2</sub> sensing response, particularly at an operational temperature of 150 °C, suggesting its promising potential for Cl<sub>2</sub> detection. The LOD has been calculated for Ag-Bi<sub>2</sub>S<sub>3</sub> sensor showing results of 0.150 better than pristine Bi<sub>2</sub>S<sub>3.</sub> HOMO-LUMO and PCA analysis for sensors has been studied to understand their capabilities with different gas sensing.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"223 \",\"pages\":\"Article 109024\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001734\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001734","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Influence of Ag-Bi2S3 nanocomposites for highly sensitive and selective Cl2 gas sensors: Synthesis, characterization, and gas sensing performance
The gas sensing capabilities of Bi2S3 chalcogenide have been actively enhanced and explored revealing its potential for high-performance Cl2 gas detection under different environmental conditions and sensing configurations. This work successfully synthesized Bi2S3 material via the SILAR method and further enhanced its sensing capabilities by fabricating Ag-Bi2S3 nanocomposite. Both pristine Bi2S3 and Ag-Bi2S3 nanocomposite films underwent comprehensive characterization utilizing techniques such as FESEM, EDX, XRD, XPS, and RAMAN to analyze their morphological, structural, and chemical properties. Gas sensing capabilities were evaluated across a temperature range of 26–350 °C and varying Cl2 gas concentrations (0.1–50 ppm). The findings reveal that the Ag-Bi2S3 sensor demonstrates notably superior Cl2 sensing response, particularly at an operational temperature of 150 °C, suggesting its promising potential for Cl2 detection. The LOD has been calculated for Ag-Bi2S3 sensor showing results of 0.150 better than pristine Bi2S3. HOMO-LUMO and PCA analysis for sensors has been studied to understand their capabilities with different gas sensing.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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