用于高性能神经形态计算的基于六方氮化硼的阿托焦耳晶体管（Small 45/2024）

IF 13 2区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Small Pub Date : 2024-11-07 DOI:10.1002/smll.202470328

Jiye Kim, Jaesub Song, Hyunjoung Kwak, Chang-Won Choi, Kyungmi Noh, Seokho Moon, Hyeonwoong Hwang, Inyong Hwang, Hokyeong Jeong, Si-Young Choi, Seyoung Kim, Jong Kyu Kim

{"title":"用于高性能神经形态计算的基于六方氮化硼的阿托焦耳晶体管（Small 45/2024）","authors":"Jiye Kim, Jaesub Song, Hyunjoung Kwak, Chang-Won Choi, Kyungmi Noh, Seokho Moon, Hyeonwoong Hwang, Inyong Hwang, Hokyeong Jeong, Si-Young Choi, Seyoung Kim, Jong Kyu Kim","doi":"10.1002/smll.202470328","DOIUrl":null,"url":null,"abstract":"<p><b>Neuromorphic Computing</b></p><p>In article number 2403737, Jong Kyu Kim and co-workers present a two-dimensional hexagonal boron nitride based memristor with a metal-insulator-semiconductor configuration, specifically designed for energy-efficient neuromorphic applications operating at attojoule levels. This breakthrough has the potential to revolutionize energy usage in neuromorphic systems, bridging the gap in energy efficiency between artificial and biological synapses.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":228,"journal":{"name":"Small","volume":"20 45","pages":""},"PeriodicalIF":13.0000,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/smll.202470328","citationCount":"0","resultStr":"{\"title\":\"Attojoule Hexagonal Boron Nitride-Based Memristor for High-Performance Neuromorphic Computing (Small 45/2024)\",\"authors\":\"Jiye Kim, Jaesub Song, Hyunjoung Kwak, Chang-Won Choi, Kyungmi Noh, Seokho Moon, Hyeonwoong Hwang, Inyong Hwang, Hokyeong Jeong, Si-Young Choi, Seyoung Kim, Jong Kyu Kim\",\"doi\":\"10.1002/smll.202470328\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><b>Neuromorphic Computing</b></p><p>In article number 2403737, Jong Kyu Kim and co-workers present a two-dimensional hexagonal boron nitride based memristor with a metal-insulator-semiconductor configuration, specifically designed for energy-efficient neuromorphic applications operating at attojoule levels. This breakthrough has the potential to revolutionize energy usage in neuromorphic systems, bridging the gap in energy efficiency between artificial and biological synapses.\\n\\n <figure>\\n <div><picture>\\n <source></source></picture><p></p>\\n </div>\\n </figure></p>\",\"PeriodicalId\":228,\"journal\":{\"name\":\"Small\",\"volume\":\"20 45\",\"pages\":\"\"},\"PeriodicalIF\":13.0000,\"publicationDate\":\"2024-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/smll.202470328\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Small\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/smll.202470328\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Small","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/smll.202470328","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

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摘要

神经形态计算在文章编号 2403737 中，Jong Kyu Kim 及其合作者介绍了一种基于二维六边形氮化硼的忆阻器，它具有金属-绝缘体-半导体结构，专门设计用于在阿托焦耳级运行的高能效神经形态应用。这一突破有望彻底改变神经形态系统的能源使用，缩小人工突触与生物突触之间的能效差距。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Attojoule Hexagonal Boron Nitride-Based Memristor for High-Performance Neuromorphic Computing (Small 45/2024)

Neuromorphic Computing

In article number 2403737, Jong Kyu Kim and co-workers present a two-dimensional hexagonal boron nitride based memristor with a metal-insulator-semiconductor configuration, specifically designed for energy-efficient neuromorphic applications operating at attojoule levels. This breakthrough has the potential to revolutionize energy usage in neuromorphic systems, bridging the gap in energy efficiency between artificial and biological synapses.

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来源期刊

Small 工程技术-材料科学：综合

CiteScore

17.70

自引率

3.80%

发文量

1830

审稿时长

2.1 months

期刊介绍： Small serves as an exceptional platform for both experimental and theoretical studies in fundamental and applied interdisciplinary research at the nano- and microscale. The journal offers a compelling mix of peer-reviewed Research Articles, Reviews, Perspectives, and Comments. With a remarkable 2022 Journal Impact Factor of 13.3 (Journal Citation Reports from Clarivate Analytics, 2023), Small remains among the top multidisciplinary journals, covering a wide range of topics at the interface of materials science, chemistry, physics, engineering, medicine, and biology. Small's readership includes biochemists, biologists, biomedical scientists, chemists, engineers, information technologists, materials scientists, physicists, and theoreticians alike.