{"title":"基于器件级热分析的高功率密度 Ku 波段氮化镓功率放大器","authors":"Jiuding Zhou, Chupeng Yi, Wenliang Liu, Yang Lu, Xiaohua Ma, Yuanfu Zhao, Yue Hao","doi":"10.1002/jnm.3311","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>This paper introduces a new design method for a high-power density GaN MMIC amplifier operating in the Ku-band. A thermal model to investigate the thermal distribution of power amplifiers is proposed to achieve optimal performance in terms of power density, chip size, and channel temperature. The thermal distribution and channel temperature of a single device, an eight-way parallel device combination, and the entire PA layout are obtained by finite element simulation. The thermal coupling effects of high-power MMICs are analyzed in detail. The thermal resistances are extracted from the simulation to design a Ku-band amplifier. Measurement results demonstrate that the designed amplifier achieves 43.0–44.2 dBm output power and 22.7%–34.5% PAE at 28 V drain voltage with a 100 μs pulse width and 10% duty cycle within 12–18 GHz. The proposed design method enables the amplifier to have a compact layout of 10.88 mm<sup>2</sup> and a power density between 1.84 and 2.42 W/mm. This design method can offer valuable insights for future development of high-power MMIC amplifiers.</p>\n </div>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 6","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High Power Density Ku-Band GaN Power Amplifier Based on Device-Level Thermal Analysis\",\"authors\":\"Jiuding Zhou, Chupeng Yi, Wenliang Liu, Yang Lu, Xiaohua Ma, Yuanfu Zhao, Yue Hao\",\"doi\":\"10.1002/jnm.3311\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div>\\n \\n <p>This paper introduces a new design method for a high-power density GaN MMIC amplifier operating in the Ku-band. A thermal model to investigate the thermal distribution of power amplifiers is proposed to achieve optimal performance in terms of power density, chip size, and channel temperature. The thermal distribution and channel temperature of a single device, an eight-way parallel device combination, and the entire PA layout are obtained by finite element simulation. The thermal coupling effects of high-power MMICs are analyzed in detail. The thermal resistances are extracted from the simulation to design a Ku-band amplifier. Measurement results demonstrate that the designed amplifier achieves 43.0–44.2 dBm output power and 22.7%–34.5% PAE at 28 V drain voltage with a 100 μs pulse width and 10% duty cycle within 12–18 GHz. The proposed design method enables the amplifier to have a compact layout of 10.88 mm<sup>2</sup> and a power density between 1.84 and 2.42 W/mm. This design method can offer valuable insights for future development of high-power MMIC amplifiers.</p>\\n </div>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":\"37 6\",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3311\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3311","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A High Power Density Ku-Band GaN Power Amplifier Based on Device-Level Thermal Analysis
This paper introduces a new design method for a high-power density GaN MMIC amplifier operating in the Ku-band. A thermal model to investigate the thermal distribution of power amplifiers is proposed to achieve optimal performance in terms of power density, chip size, and channel temperature. The thermal distribution and channel temperature of a single device, an eight-way parallel device combination, and the entire PA layout are obtained by finite element simulation. The thermal coupling effects of high-power MMICs are analyzed in detail. The thermal resistances are extracted from the simulation to design a Ku-band amplifier. Measurement results demonstrate that the designed amplifier achieves 43.0–44.2 dBm output power and 22.7%–34.5% PAE at 28 V drain voltage with a 100 μs pulse width and 10% duty cycle within 12–18 GHz. The proposed design method enables the amplifier to have a compact layout of 10.88 mm2 and a power density between 1.84 and 2.42 W/mm. This design method can offer valuable insights for future development of high-power MMIC amplifiers.
期刊介绍：
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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