Ke Shu, Chun-Hai Wang, Guang-Tao Chen, Zhi-Lin Ji, Wei-Xin Yan, Fa Luo
{"title":"LnCoO3(Ln=La、Pr、Tb)包晶石的晶体结构和电学特性","authors":"Ke Shu, Chun-Hai Wang, Guang-Tao Chen, Zhi-Lin Ji, Wei-Xin Yan, Fa Luo","doi":"10.1007/s10854-024-13874-w","DOIUrl":null,"url":null,"abstract":"<div><p>The rare-earth cobalt-based perovskite oxides LnCoO<sub>3</sub> are promising electronic functional materials. The different synthesis conditions and microstructures led to obviously different results in previous investigations. In this study, LnCoO<sub>3</sub> (Ln=La, Pr, Tb) with different Ln <i>f</i>-electron configurations [La<sup>3+</sup> (4<i>f</i> <sup>0</sup>), Pr<sup>3+</sup> (4<i>f</i> <sup>3</sup>), and Tb<sup>3+</sup> (4<i>f</i> <sup>9</sup>)] were investigated through careful synthesis controlling. The bond valence analysis, Mulliken population charge analysis and XPS analysis confirm that the Ln and Co ions in LnCoO<sub>3</sub> are all in + 3 oxide state (i.e. La<sup>3+</sup>, Pr<sup>3+</sup>, Tb<sup>3+</sup>, and Co<sup>3+</sup>). The different A-site cations have no significant effect on the [CoO<sub>6</sub>] octahedra size in LnCoO<sub>3</sub> and average Co–O bond lengths are all ~ 1.93 Å. The band structure of LnCoO<sub>3</sub> shows similar coupling distribution between Co-3<i>d</i> and O-2<i>p</i> bands, which originates from the similarity of the [CoO<sub>6</sub>] octahedra. This band structure leads to similar OER and ORR catalytic activities of LnCoO<sub>3</sub>. The OER overpotential of LnCoO<sub>3</sub> is 463–506 mV, which is ~ 100 mV lower than that of commercial Pt/C catalysts, and the ORR half-wave potential is 0.63–0.67 V. The conductivity (<i>σ</i>) of LnCoO<sub>3</sub> is 0.11 S cm<sup>−1</sup> for LaCoO<sub>3</sub>, 0.04 S cm<sup>−1</sup> for PrCoO<sub>3</sub> and 3.91 × 10<sup>–4</sup> S cm<sup>−1</sup> for TbCoO<sub>3</sub> at room temperature. This study reveals the [CoO<sub>6</sub>] octahedra in LnCoO<sub>3</sub> perovskite is the key factor to their band structure and electrocatalytic behavior, providing an important knowledge for the research and development of these materials.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 33","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Crystal structure and electrical properties of LnCoO3 (Ln=La, Pr, Tb) perovskite\",\"authors\":\"Ke Shu, Chun-Hai Wang, Guang-Tao Chen, Zhi-Lin Ji, Wei-Xin Yan, Fa Luo\",\"doi\":\"10.1007/s10854-024-13874-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The rare-earth cobalt-based perovskite oxides LnCoO<sub>3</sub> are promising electronic functional materials. The different synthesis conditions and microstructures led to obviously different results in previous investigations. In this study, LnCoO<sub>3</sub> (Ln=La, Pr, Tb) with different Ln <i>f</i>-electron configurations [La<sup>3+</sup> (4<i>f</i> <sup>0</sup>), Pr<sup>3+</sup> (4<i>f</i> <sup>3</sup>), and Tb<sup>3+</sup> (4<i>f</i> <sup>9</sup>)] were investigated through careful synthesis controlling. The bond valence analysis, Mulliken population charge analysis and XPS analysis confirm that the Ln and Co ions in LnCoO<sub>3</sub> are all in + 3 oxide state (i.e. La<sup>3+</sup>, Pr<sup>3+</sup>, Tb<sup>3+</sup>, and Co<sup>3+</sup>). The different A-site cations have no significant effect on the [CoO<sub>6</sub>] octahedra size in LnCoO<sub>3</sub> and average Co–O bond lengths are all ~ 1.93 Å. The band structure of LnCoO<sub>3</sub> shows similar coupling distribution between Co-3<i>d</i> and O-2<i>p</i> bands, which originates from the similarity of the [CoO<sub>6</sub>] octahedra. This band structure leads to similar OER and ORR catalytic activities of LnCoO<sub>3</sub>. The OER overpotential of LnCoO<sub>3</sub> is 463–506 mV, which is ~ 100 mV lower than that of commercial Pt/C catalysts, and the ORR half-wave potential is 0.63–0.67 V. The conductivity (<i>σ</i>) of LnCoO<sub>3</sub> is 0.11 S cm<sup>−1</sup> for LaCoO<sub>3</sub>, 0.04 S cm<sup>−1</sup> for PrCoO<sub>3</sub> and 3.91 × 10<sup>–4</sup> S cm<sup>−1</sup> for TbCoO<sub>3</sub> at room temperature. This study reveals the [CoO<sub>6</sub>] octahedra in LnCoO<sub>3</sub> perovskite is the key factor to their band structure and electrocatalytic behavior, providing an important knowledge for the research and development of these materials.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 33\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13874-w\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13874-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
稀土钴基包晶氧化物 LnCoO3 是一种很有前途的电子功能材料。在以往的研究中,不同的合成条件和微观结构导致了明显不同的结果。本研究通过精心的合成控制,研究了不同 Ln f 电子构型 [La3+ (4f 0)、Pr3+ (4f 3) 和 Tb3+ (4f 9)]的 LnCoO3(Ln=La、Pr、Tb)。键价分析、Mulliken 种群电荷分析和 XPS 分析证实,LnCoO3 中的 Ln 和 Co 离子都处于 + 3 氧化态(即 La3+、Pr3+、Tb3+ 和 Co3+)。不同的 A 位阳离子对 LnCoO3 中[CoO6]八面体的大小没有明显影响,Co-O 键的平均长度都在 1.93 Å 左右。LnCoO3 的能带结构显示出 Co-3d 和 O-2p 带之间相似的耦合分布,这源于[CoO6]八面体的相似性。这种带状结构导致 LnCoO3 具有相似的 OER 和 ORR 催化活性。室温下,LnCoO3 的电导率(σ)为 0.11 S cm-1(LaCoO3)、0.04 S cm-1(PrCoO3)和 3.91 × 10-4 S cm-1(TbCoO3)。这项研究揭示了锰钴氧化物中的[CoO6]八面体是其能带结构和电催化行为的关键因素,为这些材料的研究和开发提供了重要的知识。
Crystal structure and electrical properties of LnCoO3 (Ln=La, Pr, Tb) perovskite
The rare-earth cobalt-based perovskite oxides LnCoO3 are promising electronic functional materials. The different synthesis conditions and microstructures led to obviously different results in previous investigations. In this study, LnCoO3 (Ln=La, Pr, Tb) with different Ln f-electron configurations [La3+ (4f0), Pr3+ (4f3), and Tb3+ (4f9)] were investigated through careful synthesis controlling. The bond valence analysis, Mulliken population charge analysis and XPS analysis confirm that the Ln and Co ions in LnCoO3 are all in + 3 oxide state (i.e. La3+, Pr3+, Tb3+, and Co3+). The different A-site cations have no significant effect on the [CoO6] octahedra size in LnCoO3 and average Co–O bond lengths are all ~ 1.93 Å. The band structure of LnCoO3 shows similar coupling distribution between Co-3d and O-2p bands, which originates from the similarity of the [CoO6] octahedra. This band structure leads to similar OER and ORR catalytic activities of LnCoO3. The OER overpotential of LnCoO3 is 463–506 mV, which is ~ 100 mV lower than that of commercial Pt/C catalysts, and the ORR half-wave potential is 0.63–0.67 V. The conductivity (σ) of LnCoO3 is 0.11 S cm−1 for LaCoO3, 0.04 S cm−1 for PrCoO3 and 3.91 × 10–4 S cm−1 for TbCoO3 at room temperature. This study reveals the [CoO6] octahedra in LnCoO3 perovskite is the key factor to their band structure and electrocatalytic behavior, providing an important knowledge for the research and development of these materials.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.