{"title":"无结 TFET 的性能分析和设计比较：回顾研究","authors":"Aradhana Mohanty, Md Akram Ahmad, Pankaj Kumar, Raushan Kumar","doi":"10.1007/s12633-024-03167-6","DOIUrl":null,"url":null,"abstract":"<div><p>Many research is underway in the semiconductor industry. Conventional MOSFETs are getting replaced with emerging devices such as junctionless field-effect-transistor (JLTFET) to increase the efficiency and performance of the devices. The incorporation of junctionless mechanism in JLTFET has significantly reduced fabrication complexity because of independency with the pn junction formed at source and drain regions. JLTFET has shown promising electrical behavior with the improvement in the ON-state current, reduction in ambipolar conduction, and reduced short channel effects. The significant enhancement in OFF-state current resulting in improved <i>I</i><sub><i>ON</i></sub>/<i>I</i><sub><i>OFF</i></sub> drain current ratio which in turn result in comparatively steeper subthreshold slope. In this review paper, the significance of JLTFET has been analysed in terms of its working principle and considering its electrical behavior such as architectural, dielectric, semiconductor material, oxide thickness, gate workfunction, source workfunction engineering and its performance at higher temperature.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 18","pages":"6305 - 6312"},"PeriodicalIF":2.8000,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance Analysis and Design Comparison of Junctionless TFET: a Review Study\",\"authors\":\"Aradhana Mohanty, Md Akram Ahmad, Pankaj Kumar, Raushan Kumar\",\"doi\":\"10.1007/s12633-024-03167-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Many research is underway in the semiconductor industry. Conventional MOSFETs are getting replaced with emerging devices such as junctionless field-effect-transistor (JLTFET) to increase the efficiency and performance of the devices. The incorporation of junctionless mechanism in JLTFET has significantly reduced fabrication complexity because of independency with the pn junction formed at source and drain regions. JLTFET has shown promising electrical behavior with the improvement in the ON-state current, reduction in ambipolar conduction, and reduced short channel effects. The significant enhancement in OFF-state current resulting in improved <i>I</i><sub><i>ON</i></sub>/<i>I</i><sub><i>OFF</i></sub> drain current ratio which in turn result in comparatively steeper subthreshold slope. In this review paper, the significance of JLTFET has been analysed in terms of its working principle and considering its electrical behavior such as architectural, dielectric, semiconductor material, oxide thickness, gate workfunction, source workfunction engineering and its performance at higher temperature.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"16 18\",\"pages\":\"6305 - 6312\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-024-03167-6\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03167-6","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Performance Analysis and Design Comparison of Junctionless TFET: a Review Study
Many research is underway in the semiconductor industry. Conventional MOSFETs are getting replaced with emerging devices such as junctionless field-effect-transistor (JLTFET) to increase the efficiency and performance of the devices. The incorporation of junctionless mechanism in JLTFET has significantly reduced fabrication complexity because of independency with the pn junction formed at source and drain regions. JLTFET has shown promising electrical behavior with the improvement in the ON-state current, reduction in ambipolar conduction, and reduced short channel effects. The significant enhancement in OFF-state current resulting in improved ION/IOFF drain current ratio which in turn result in comparatively steeper subthreshold slope. In this review paper, the significance of JLTFET has been analysed in terms of its working principle and considering its electrical behavior such as architectural, dielectric, semiconductor material, oxide thickness, gate workfunction, source workfunction engineering and its performance at higher temperature.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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