喷涂 MgxCo3-xO4 薄膜的电导率和热导率

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-11-23 DOI:10.1007/s11082-024-07761-1
L. Soussi, C. Louardi, T. Garmim, N. Benaissa, M. Bouzidi, O. Zahot, A. El,  Bachiri, A. Louardi, Z. ElJouad, H. Erguig
{"title":"喷涂 MgxCo3-xO4 薄膜的电导率和热导率","authors":"L. Soussi,&nbsp;C. Louardi,&nbsp;T. Garmim,&nbsp;N. Benaissa,&nbsp;M. Bouzidi,&nbsp;O. Zahot,&nbsp;A. El,&nbsp; Bachiri,&nbsp;A. Louardi,&nbsp;Z. ElJouad,&nbsp;H. Erguig","doi":"10.1007/s11082-024-07761-1","DOIUrl":null,"url":null,"abstract":"<div><p>The effect of Mg substitution on the structural, morphological and electrical properties of sprayed magnesium cobalt oxide (Mg<sub>x</sub>Co<sub>3-x</sub>O<sub>4</sub>) thin films (0 ≤ x ≤ 1) have been studed using X-ray diffraction (XRD), scanning electron microscopy, compositional analysis with EDS technique and four probe method for the electric conductivity measurements. XRD evaluation exhibits that Mg<sub>x</sub>Co<sub>3-x</sub>O<sub>4</sub> thin films are polycrystalline with spinel cubic structure. The EDS study confirms the presence of Mg and Co in the substituted films with the same concentrations as in the starting solution confirming the formation of Mg<sub>x</sub>Co<sub>3-x</sub>O<sub>4</sub> thin films. The effect of temperature on the dc conductivity reveals that the electrical transport mechanism in Mg<sub>x</sub>Co<sub>3-x</sub>O<sub>4</sub> thin films is based on the three-dimensional Mott’s variable-range hopping model. The density of states, the hopping distance, and the hopping energy have been successfully evaluated.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical and thermoelectrical conductivity of sprayed MgxCo3-xO4 thin films\",\"authors\":\"L. Soussi,&nbsp;C. Louardi,&nbsp;T. Garmim,&nbsp;N. Benaissa,&nbsp;M. Bouzidi,&nbsp;O. Zahot,&nbsp;A. El,&nbsp; Bachiri,&nbsp;A. Louardi,&nbsp;Z. ElJouad,&nbsp;H. Erguig\",\"doi\":\"10.1007/s11082-024-07761-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The effect of Mg substitution on the structural, morphological and electrical properties of sprayed magnesium cobalt oxide (Mg<sub>x</sub>Co<sub>3-x</sub>O<sub>4</sub>) thin films (0 ≤ x ≤ 1) have been studed using X-ray diffraction (XRD), scanning electron microscopy, compositional analysis with EDS technique and four probe method for the electric conductivity measurements. XRD evaluation exhibits that Mg<sub>x</sub>Co<sub>3-x</sub>O<sub>4</sub> thin films are polycrystalline with spinel cubic structure. The EDS study confirms the presence of Mg and Co in the substituted films with the same concentrations as in the starting solution confirming the formation of Mg<sub>x</sub>Co<sub>3-x</sub>O<sub>4</sub> thin films. The effect of temperature on the dc conductivity reveals that the electrical transport mechanism in Mg<sub>x</sub>Co<sub>3-x</sub>O<sub>4</sub> thin films is based on the three-dimensional Mott’s variable-range hopping model. The density of states, the hopping distance, and the hopping energy have been successfully evaluated.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"56 12\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2024-11-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-024-07761-1\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07761-1","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

利用 X 射线衍射 (XRD)、扫描电子显微镜、EDS 技术的成分分析和四探针电导率测量法,研究了镁替代物对喷涂氧化镁钴(MgxCo3-xO4)薄膜(0 ≤ x ≤ 1)的结构、形态和电学特性的影响。X 射线衍射评估表明,MgxCo3-xO4 薄膜是多晶体,具有尖晶立方结构。EDS 研究证实,替代薄膜中存在与起始溶液浓度相同的镁和钴,从而确认了 MgxCo3-xO4 薄膜的形成。温度对直流电导的影响表明,MgxCo3-xO4 薄膜中的电传输机制是基于三维莫特变程跳变模型。研究成功地评估了态密度、跳变距离和跳变能量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Electrical and thermoelectrical conductivity of sprayed MgxCo3-xO4 thin films

The effect of Mg substitution on the structural, morphological and electrical properties of sprayed magnesium cobalt oxide (MgxCo3-xO4) thin films (0 ≤ x ≤ 1) have been studed using X-ray diffraction (XRD), scanning electron microscopy, compositional analysis with EDS technique and four probe method for the electric conductivity measurements. XRD evaluation exhibits that MgxCo3-xO4 thin films are polycrystalline with spinel cubic structure. The EDS study confirms the presence of Mg and Co in the substituted films with the same concentrations as in the starting solution confirming the formation of MgxCo3-xO4 thin films. The effect of temperature on the dc conductivity reveals that the electrical transport mechanism in MgxCo3-xO4 thin films is based on the three-dimensional Mott’s variable-range hopping model. The density of states, the hopping distance, and the hopping energy have been successfully evaluated.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
期刊最新文献
Exploring random laser characteristics in core@ shell nano-scatter centers: trends and opportunities High sensitivity of a perfect absorber based on octagonal-star and circular ring patterned graphene metasurface Correction: Investigation on optical properties of lead-free Cs3Bi2Br9 perovskite derivative quantum dots synthesised via modified LARP method Structural, optical, surface topographical and electrical properties of transparent vanadium doped ZnO absorbing layer for photovoltaic application A high-performance biosensor based on one-dimensional photonic crystal for the detection of cancer cells
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1