P. Meejitpaisan, Ramachari Doddoji, S. Kothan, H. J. Kim, J. Kaewkhao
{"title":"不同铕浓度对硅氟磷酸盐玻璃的光致发光和辐射发光特性的影响,用于制造橘红色发光和闪烁材料","authors":"P. Meejitpaisan, Ramachari Doddoji, S. Kothan, H. J. Kim, J. Kaewkhao","doi":"10.1007/s10854-024-13875-9","DOIUrl":null,"url":null,"abstract":"<div><p>Silicofluorophosphate (PSEu) glasses doped with various amounts of Eu<sub>2</sub>O<sub>3</sub> were fabricated by the melt quenching technique to know their potential use in reddish-orange lighting, especially in scintillator properties. Refractive indices, densities, and molar volumes of the PSEu glasses were obtained. Functional groups of the prepared glasses were studied in the range of 500 to 4000 cm<sup>−1</sup> using infrared spectroscopy. The absorption of PSEu glasses was studied in the range of 350–2400 nm range and contained peaks from the <sup>7</sup>F<sub>1</sub> and <sup>7</sup>F<sub>0</sub> ground levels. The excitation band at the <sup>7</sup>F<sub>0</sub> → <sup>5</sup>D<sub>2</sub> (463 nm) transition is of interest in the present work to estimate the phonon energy value (1222 cm<sup>−1</sup>) of the host glass using the PSB (phonon side band) spectroscopy. JO theory was applied to determine the Ω<sub>2, 4, 6</sub> intensity parameters by fitting the calculated and experimental oscillator strengths of the various absorption bands of Eu<sup>3+</sup> ions. The asymmetric ratio between <sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>1</sub> and <sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>2</sub> emission transitions was calculated due to the dependences of Eu<sup>3+</sup> ions on local symmetry at the <sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>2</sub> emission transition. The decay curves for the <sup>5</sup>D<sub>0</sub> (614 nm) state of Eu<sup>3+</sup> were measured upon 394 nm stimulation, which exhibits the single exponential nature in PSEu glasses. The color coordinates (x, y) of PSEu glasses were located near the reddish-orange zone. The radioluminescence characteristics of PSEu glasses and BGO crystal were studied under x-ray excitation in terms of scintillation efficiency.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 34","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of different europium concentrations on the photo and radioluminescence properties of silicofluorophosphate glass for reddish-orange emitting and scintillating materials\",\"authors\":\"P. Meejitpaisan, Ramachari Doddoji, S. Kothan, H. J. Kim, J. Kaewkhao\",\"doi\":\"10.1007/s10854-024-13875-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Silicofluorophosphate (PSEu) glasses doped with various amounts of Eu<sub>2</sub>O<sub>3</sub> were fabricated by the melt quenching technique to know their potential use in reddish-orange lighting, especially in scintillator properties. Refractive indices, densities, and molar volumes of the PSEu glasses were obtained. Functional groups of the prepared glasses were studied in the range of 500 to 4000 cm<sup>−1</sup> using infrared spectroscopy. The absorption of PSEu glasses was studied in the range of 350–2400 nm range and contained peaks from the <sup>7</sup>F<sub>1</sub> and <sup>7</sup>F<sub>0</sub> ground levels. The excitation band at the <sup>7</sup>F<sub>0</sub> → <sup>5</sup>D<sub>2</sub> (463 nm) transition is of interest in the present work to estimate the phonon energy value (1222 cm<sup>−1</sup>) of the host glass using the PSB (phonon side band) spectroscopy. JO theory was applied to determine the Ω<sub>2, 4, 6</sub> intensity parameters by fitting the calculated and experimental oscillator strengths of the various absorption bands of Eu<sup>3+</sup> ions. The asymmetric ratio between <sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>1</sub> and <sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>2</sub> emission transitions was calculated due to the dependences of Eu<sup>3+</sup> ions on local symmetry at the <sup>5</sup>D<sub>0</sub> → <sup>7</sup>F<sub>2</sub> emission transition. The decay curves for the <sup>5</sup>D<sub>0</sub> (614 nm) state of Eu<sup>3+</sup> were measured upon 394 nm stimulation, which exhibits the single exponential nature in PSEu glasses. The color coordinates (x, y) of PSEu glasses were located near the reddish-orange zone. The radioluminescence characteristics of PSEu glasses and BGO crystal were studied under x-ray excitation in terms of scintillation efficiency.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"35 34\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-11-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-13875-9\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13875-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Impact of different europium concentrations on the photo and radioluminescence properties of silicofluorophosphate glass for reddish-orange emitting and scintillating materials
Silicofluorophosphate (PSEu) glasses doped with various amounts of Eu2O3 were fabricated by the melt quenching technique to know their potential use in reddish-orange lighting, especially in scintillator properties. Refractive indices, densities, and molar volumes of the PSEu glasses were obtained. Functional groups of the prepared glasses were studied in the range of 500 to 4000 cm−1 using infrared spectroscopy. The absorption of PSEu glasses was studied in the range of 350–2400 nm range and contained peaks from the 7F1 and 7F0 ground levels. The excitation band at the 7F0 → 5D2 (463 nm) transition is of interest in the present work to estimate the phonon energy value (1222 cm−1) of the host glass using the PSB (phonon side band) spectroscopy. JO theory was applied to determine the Ω2, 4, 6 intensity parameters by fitting the calculated and experimental oscillator strengths of the various absorption bands of Eu3+ ions. The asymmetric ratio between 5D0 → 7F1 and 5D0 → 7F2 emission transitions was calculated due to the dependences of Eu3+ ions on local symmetry at the 5D0 → 7F2 emission transition. The decay curves for the 5D0 (614 nm) state of Eu3+ were measured upon 394 nm stimulation, which exhibits the single exponential nature in PSEu glasses. The color coordinates (x, y) of PSEu glasses were located near the reddish-orange zone. The radioluminescence characteristics of PSEu glasses and BGO crystal were studied under x-ray excitation in terms of scintillation efficiency.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.