M.Y. Raïâ, R. Masrour, M. Hamedoun, J. Kharbach, A. Rezzouk, N. Benzakour, K. Bouslykhane
{"title":"全面分析四元 Heusler 化合物 CoTiFeGe 的块体和 (001) 表面特性","authors":"M.Y. Raïâ, R. Masrour, M. Hamedoun, J. Kharbach, A. Rezzouk, N. Benzakour, K. Bouslykhane","doi":"10.1016/j.mssp.2024.109120","DOIUrl":null,"url":null,"abstract":"<div><div>The study investigates the CoTiFeGe quaternary Heusler alloy, focusing on its bulk structure with various ordering types and its (001) surface terminations of ∗CoFe and ∗TiGe. Employing density functional theory (DFT), researchers analyzed the material's properties. Calculations of elastic constants provided insights into the alloy's mechanical properties. Electronic structure analysis, specifically the density of states and band structure for XA-type ordering, revealed half-metallic characteristics. Using both GGA and mBJ-GGA methods, the study found band gaps of 0.490 eV and 0.982 eV, respectively, confirming the alloy's half-metallic nature. Surface analysis showed that the ∗CoFe-terminated (001) surface loses its half-metallic ferromagnetic character, while the ∗TiGe-terminated surface maintains complete spin polarization. This finding has significant implications for potential spintronic applications. Optical property investigations of both bulk and (001) surfaces supported the material's semiconducting nature. The primary optical reflections were observed in the visible and infrared regions, with minimal loss in the same spectral range. The presence of absorption in the (001) surface suggests potential applications in optoelectronics. Additionally, the research explored the alloy's thermoelectric properties by examining its transport coefficients.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109120"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comprehensive analysis of bulk and (001) surface properties of the quaternary Heusler compound CoTiFeGe\",\"authors\":\"M.Y. Raïâ, R. Masrour, M. Hamedoun, J. Kharbach, A. Rezzouk, N. Benzakour, K. Bouslykhane\",\"doi\":\"10.1016/j.mssp.2024.109120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The study investigates the CoTiFeGe quaternary Heusler alloy, focusing on its bulk structure with various ordering types and its (001) surface terminations of ∗CoFe and ∗TiGe. Employing density functional theory (DFT), researchers analyzed the material's properties. Calculations of elastic constants provided insights into the alloy's mechanical properties. Electronic structure analysis, specifically the density of states and band structure for XA-type ordering, revealed half-metallic characteristics. Using both GGA and mBJ-GGA methods, the study found band gaps of 0.490 eV and 0.982 eV, respectively, confirming the alloy's half-metallic nature. Surface analysis showed that the ∗CoFe-terminated (001) surface loses its half-metallic ferromagnetic character, while the ∗TiGe-terminated surface maintains complete spin polarization. This finding has significant implications for potential spintronic applications. Optical property investigations of both bulk and (001) surfaces supported the material's semiconducting nature. The primary optical reflections were observed in the visible and infrared regions, with minimal loss in the same spectral range. The presence of absorption in the (001) surface suggests potential applications in optoelectronics. Additionally, the research explored the alloy's thermoelectric properties by examining its transport coefficients.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"187 \",\"pages\":\"Article 109120\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124010163\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010163","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Comprehensive analysis of bulk and (001) surface properties of the quaternary Heusler compound CoTiFeGe
The study investigates the CoTiFeGe quaternary Heusler alloy, focusing on its bulk structure with various ordering types and its (001) surface terminations of ∗CoFe and ∗TiGe. Employing density functional theory (DFT), researchers analyzed the material's properties. Calculations of elastic constants provided insights into the alloy's mechanical properties. Electronic structure analysis, specifically the density of states and band structure for XA-type ordering, revealed half-metallic characteristics. Using both GGA and mBJ-GGA methods, the study found band gaps of 0.490 eV and 0.982 eV, respectively, confirming the alloy's half-metallic nature. Surface analysis showed that the ∗CoFe-terminated (001) surface loses its half-metallic ferromagnetic character, while the ∗TiGe-terminated surface maintains complete spin polarization. This finding has significant implications for potential spintronic applications. Optical property investigations of both bulk and (001) surfaces supported the material's semiconducting nature. The primary optical reflections were observed in the visible and infrared regions, with minimal loss in the same spectral range. The presence of absorption in the (001) surface suggests potential applications in optoelectronics. Additionally, the research explored the alloy's thermoelectric properties by examining its transport coefficients.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.