Pb1-1.5xLax(Zr0.5Sn0.4Ti0.1)O3 反铁电陶瓷的非同调结构和储能特性

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-25 DOI:10.1007/s10854-024-13918-1
Zhiyong Wang, Chang Liu, Tianyang Zheng, Yunfei Liu, Yinong Lyu
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引用次数: 0

摘要

(Pb,La)(Zr,Sn,Ti)O3(PLZST)陶瓷具有独特的反铁电(AFE)特性,是一种极具潜力的材料,可用于多种功能应用,尤其是能量存储和转换。本研究采用传统固态反应方法制备了 Pb1-1.5xLax(Zr0.5Sn0.4Ti0.1)O3(x = 0、0.005、0.01、0.015、0.02 和 0.025)AFE 陶瓷。随着 La 掺杂量的增加,陶瓷的相结构从 x = 0 时的四方相转变为 x = 0.02 时的假立方相。值得注意的是,PLZST-2 陶瓷的储能密度和储能效率分别提高了 1.63 J/cm3 和 82.23%。透射电子显微镜(TEM)分析表明,在 Pb1-1.5xLax(Zr0.5Sn0.4Ti0.1)O3 中存在一种不相称的调制结构,所有反射可表示为 H = ha* + kb* + lc* ± 1/8.5(a* + b*),其中 h、k 和 l 均为整数。此外,还采用了像差校正扫描透射电子显微镜(AC-STEM)来分析 PLZST-2 样品的原子尺度结构。环形暗场(ADF)STEM 结果显示,离子位移在原子尺度上呈反平行排列。这项研究的发现增强了我们从结构角度对特殊性能的理解,并有望促进高性能材料的不断进步。
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Incommensurate modulated structure and energy storage properties of Pb1−1.5xLax(Zr0.5Sn0.4Ti0.1)O3 antiferroelectric ceramics

The (Pb, La)(Zr, Sn, Ti)O3 (PLZST) ceramic with unique antiferroelectric (AFE) properties stands as a highly promising material for diverse functional applications, especially in energy storage and conversion. In this study, Pb1–1.5xLax(Zr0.5Sn0.4Ti0.1)O3 (x = 0, 0.005, 0.01, 0.015, 0.02, and 0.025) AFE ceramics have been prepared by the conventional solid-state reaction method. The phase structure of the ceramic changed from tetragonal phase at x = 0 to pseudo-cubic phase at x = 0.02 with increasing La doping. Notably, the PLZST-2 ceramics exhibited an enhanced energy storage density of 1.63 J/cm3 and an energy storage efficiency of 82.23%, respectively. The transmission electron microscopy (TEM) analyses revealed the presence of an incommensurate modulated structure in the Pb1–1.5xLax(Zr0.5Sn0.4Ti0.1)O3, and all the reflections can be expressed as H = ha* + kb* + lc* ± 1/8.5(a* + b*), where h, k, and l are integers. Furthermore, aberration-corrected scanning transmission electron microscopy (AC-STEM) was performed to analyze the atomic-scale structure of the PLZST-2 sample. The annular dark field (ADF) STEM results show the antiparallel arrangement of ion displacement on the atomic scale. The findings of this study enhance our comprehension of the exceptional properties from a structural perspective and hold the potential to facilitate the ongoing advancement of high-performance materials.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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