基于应力诱发规则线性裂纹的倒金字塔微结构阵列高灵敏度柔性应变传感器

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-09-28 DOI:10.1007/s11664-024-11474-2
Ming Chen, Zhi Ding, Weidong Wang, Baoyin Hou, Lufeng Che
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引用次数: 0

摘要

受蜘蛛的裂隙器官启发,基于裂纹的柔性应变传感器显示出高灵敏度。然而,基于裂纹的传感器的灵敏度会受到随机和无向特征的裂纹的负面影响。在这项工作中,我们制作了一个高灵敏度的柔性应变传感器,该传感器具有由应力集中引起的规则线性微裂纹。该传感器由具有倒金字塔阵列的聚二甲基硅氧烷(PDMS)柔性衬底和溅射在衬底表面的导电金属层Ti/Au薄膜组成。当传感器被拉伸时,在倒金字塔附近会出现应力集中,导致在相邻倒金字塔之间产生垂直于拉伸方向的线性微裂纹。测试结果表明,该传感器具有高灵敏度(7.6 ~ 10%应变范围内的应变系数为9327)、宽工作范围(0 ~ 10%应变)和快速响应/恢复时间(77/82 ms)。这些特点使传感器在健康监测和人机交互方面具有潜在的应用前景,如手指运动识别和颈部弯曲方向检测。
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High-Sensitivity Flexible Strain Sensor with the Inverted Pyramid Microstructure Array Based on Stress-Induced Regular Linear Cracks

Crack-based flexible strain sensors inspired by a spider’s slit organs have exhibited high sensitivity. However, the sensitivity of crack-based sensors can be negatively affected by cracks with random and undirected features. In this work, we fabricated a high-sensitivity flexible strain sensor with regular linear microcracks induced by stress concentration. The sensor consists of a polydimethylsiloxane (PDMS) flexible substrate with an inverted pyramid array and a conductive metal layer of Ti/Au film that was sputtered on the substrate surface. When the sensor was stretched, stress concentrations will occur near the inverted pyramids, inducing the generation of linear microcracks perpendicular to the stretching directions between the adjacent inverted pyramids. The testing results demonstrated that the sensor has a high sensitivity (a gauge factor of 9327 in the strain range of 7.6–10%), a wide working range (0–10% strain), and a fast response/recovery time (77/82 ms). These features enable the sensor to have potential applications in health monitoring and human–computer interaction, such as finger motion recognition and neck bending direction detection.

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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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