Yaocheng Zhang, Zheng Liu, Tao Meng, Kaijian Lu, Li Yang
{"title":"瞬态液相键合In-48Sn/Cu焊点界面金属间层生长动力学","authors":"Yaocheng Zhang, Zheng Liu, Tao Meng, Kaijian Lu, Li Yang","doi":"10.1007/s10854-024-14180-1","DOIUrl":null,"url":null,"abstract":"<div><p>The In-48Sn/Cu solder joints were fabricated by transient liquid phase (TLP) bonding, and the morphology and growth kinetics of the interfacial intermetallic compounds (IMC) layer were investigated. The results showed that the thin and flat interfacial IMC Cu<sub>2</sub>(In, Sn) layer extended into and spalled off in the solder center region. The grains of the interfacial IMC layer coarsened and transformed from a fine rod-like structure to a coarse hexagonal prism-like structure with prominent facets. Spalled IMC particles hinder the coarsening of the interfacial IMC grains. The growth time coefficient of the interfacial IMC layer ranges from 0.306 to 0.427, and the growth activation energy is about 59.98 kJ/mol. The growth mechanism changes from grain boundary motion at 40–60 °C to diffusion growth at 80–100 °C.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 2","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth kinetics of interfacial intermetallic layer of In-48Sn/Cu solder joint by transient liquid phase bonding\",\"authors\":\"Yaocheng Zhang, Zheng Liu, Tao Meng, Kaijian Lu, Li Yang\",\"doi\":\"10.1007/s10854-024-14180-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The In-48Sn/Cu solder joints were fabricated by transient liquid phase (TLP) bonding, and the morphology and growth kinetics of the interfacial intermetallic compounds (IMC) layer were investigated. The results showed that the thin and flat interfacial IMC Cu<sub>2</sub>(In, Sn) layer extended into and spalled off in the solder center region. The grains of the interfacial IMC layer coarsened and transformed from a fine rod-like structure to a coarse hexagonal prism-like structure with prominent facets. Spalled IMC particles hinder the coarsening of the interfacial IMC grains. The growth time coefficient of the interfacial IMC layer ranges from 0.306 to 0.427, and the growth activation energy is about 59.98 kJ/mol. The growth mechanism changes from grain boundary motion at 40–60 °C to diffusion growth at 80–100 °C.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 2\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-01-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-024-14180-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-14180-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Growth kinetics of interfacial intermetallic layer of In-48Sn/Cu solder joint by transient liquid phase bonding
The In-48Sn/Cu solder joints were fabricated by transient liquid phase (TLP) bonding, and the morphology and growth kinetics of the interfacial intermetallic compounds (IMC) layer were investigated. The results showed that the thin and flat interfacial IMC Cu2(In, Sn) layer extended into and spalled off in the solder center region. The grains of the interfacial IMC layer coarsened and transformed from a fine rod-like structure to a coarse hexagonal prism-like structure with prominent facets. Spalled IMC particles hinder the coarsening of the interfacial IMC grains. The growth time coefficient of the interfacial IMC layer ranges from 0.306 to 0.427, and the growth activation energy is about 59.98 kJ/mol. The growth mechanism changes from grain boundary motion at 40–60 °C to diffusion growth at 80–100 °C.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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