2048 个动作电位记录通道,具有 2.4 µVrms 噪声和刺激伪影抑制功能。

Vijay Viswam, Yihui Chen, Amir Shadmani, Jelena Dragas, Raziyeh Bounik, Radivojevic Milos, Jan Müller, Andreas Hierlemann
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引用次数: 0

摘要

在这里,我们展示了集成在多功能高密度微电极阵列中的 2048 个低噪声、低偏移和低功耗动作电位记录通道。第一级放大器采用电阻加载开环拓扑结构,以低功耗实现 2.4 µVrms 的噪声水平。采用两种新型伪电阻器结构,实现了非常低的 HPF 角频率,而且所有通道的变化都很小。利用伪电阻器的可调节性,实现了 "软 "复位技术,抑制了刺激假象,使放大器能在 200 µs 内从饱和状态恢复。芯片采用 0.18 µm 6M1P CMOS 工艺制造,测量结果显示了所建议的电路结构和技术的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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2048 Action Potential Recording Channels with 2.4 µVrms Noise and Stimulation Artifact Suppression.

Here, we present 2048 low-noise, low-offset, and low-power action-potential recording channels, integrated in a multi-functional high-density microelectrode array. A resistively loaded open-loop topology has been adapted for the first-stage amplifier to achieve 2.4 µVrms noise levels at low power consumption. Two novel pseudo-resistor structures have been used to realize very low HPF corner frequencies with small variations across all channels. The adjustability of pseudo resistors has been exploited to realize a "soft" reset technique that suppresses stimulation artifacts so that the amplifiers can recover from saturation within 200 µs. The chips were fabricated in a 0.18 µm 6M1P CMOS process, and measurement results are presented to show the performance of the proposed circuit structures and techniques.

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