Thanh-Tung Duong, Phuong-Nam Tran, Tuan-Pham Van, Duy-Hung Nguyen, Van-Dang Tran
{"title":"用于高性能光电探测器的致密无针孔纯立方相CsPbBr3纳米晶体薄膜","authors":"Thanh-Tung Duong, Phuong-Nam Tran, Tuan-Pham Van, Duy-Hung Nguyen, Van-Dang Tran","doi":"10.1007/s13391-023-00448-x","DOIUrl":null,"url":null,"abstract":"<p>This study demonstrates a simple centrifugal coating method to prepare high-quality pure cubic phase CsPbBr<sub>3</sub> nanocrystal film. The resultant perovskite layers possess a uniform and dense 500 nm-thick, with a bandgap of 2.38 eV, a low trap-state density of 6.9 × 10<sup>− 15</sup> cm<sup>− 3</sup>, and carrier mobility of approximately 19.8 cm<sup>2</sup>V<sup>− 1</sup>s<sup>− 1</sup>. Furthermore, CsPbBr<sub>3</sub> NCs-based self-powered photodetectors with high charge carriers’ charge transfer are fabricated. The device shows a low dark current density of 1.93 × 10<sup>− 7</sup> A/cm<sup>2</sup> at room temperature. Such photodetectors show the highest responsivity of 3.0 AW<sup>− 1</sup>, specific detectivity of 1.2 × 10<sup>13</sup> Jones, and external quantum efficiency (EQE) of 920% at zero bias voltage. The proposed method shows significant promise for use in the lab fabrication of optoelectronic devices based on thin films of nanocrystal perovskite materials.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"217 - 223"},"PeriodicalIF":2.1000,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Dense, Pinholes-free Pure Cubic Phase CsPbBr3 Nanocrystals Film for High-performance Photodetector\",\"authors\":\"Thanh-Tung Duong, Phuong-Nam Tran, Tuan-Pham Van, Duy-Hung Nguyen, Van-Dang Tran\",\"doi\":\"10.1007/s13391-023-00448-x\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>This study demonstrates a simple centrifugal coating method to prepare high-quality pure cubic phase CsPbBr<sub>3</sub> nanocrystal film. The resultant perovskite layers possess a uniform and dense 500 nm-thick, with a bandgap of 2.38 eV, a low trap-state density of 6.9 × 10<sup>− 15</sup> cm<sup>− 3</sup>, and carrier mobility of approximately 19.8 cm<sup>2</sup>V<sup>− 1</sup>s<sup>− 1</sup>. Furthermore, CsPbBr<sub>3</sub> NCs-based self-powered photodetectors with high charge carriers’ charge transfer are fabricated. The device shows a low dark current density of 1.93 × 10<sup>− 7</sup> A/cm<sup>2</sup> at room temperature. Such photodetectors show the highest responsivity of 3.0 AW<sup>− 1</sup>, specific detectivity of 1.2 × 10<sup>13</sup> Jones, and external quantum efficiency (EQE) of 920% at zero bias voltage. The proposed method shows significant promise for use in the lab fabrication of optoelectronic devices based on thin films of nanocrystal perovskite materials.</p>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"20 2\",\"pages\":\"217 - 223\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2023-06-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-023-00448-x\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00448-x","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
A Dense, Pinholes-free Pure Cubic Phase CsPbBr3 Nanocrystals Film for High-performance Photodetector
This study demonstrates a simple centrifugal coating method to prepare high-quality pure cubic phase CsPbBr3 nanocrystal film. The resultant perovskite layers possess a uniform and dense 500 nm-thick, with a bandgap of 2.38 eV, a low trap-state density of 6.9 × 10− 15 cm− 3, and carrier mobility of approximately 19.8 cm2V− 1s− 1. Furthermore, CsPbBr3 NCs-based self-powered photodetectors with high charge carriers’ charge transfer are fabricated. The device shows a low dark current density of 1.93 × 10− 7 A/cm2 at room temperature. Such photodetectors show the highest responsivity of 3.0 AW− 1, specific detectivity of 1.2 × 1013 Jones, and external quantum efficiency (EQE) of 920% at zero bias voltage. The proposed method shows significant promise for use in the lab fabrication of optoelectronic devices based on thin films of nanocrystal perovskite materials.
期刊介绍:
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.