fe掺杂和v掺杂MoS2的生长及其磁电效应

Rui Tao , Zhi-Hao Yang , Chao Tan , Xin Hao , Zun-Gui Ke , Lei Yang , Li-Ping Dai , Xin-Wu Deng , Ping-Jian Li , Ze-Gao Wang
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引用次数: 1

摘要

近年来,二维材料中的磁性问题引起了人们的广泛关注。然而,本征磁性二维材料非常罕见,且大多在环境中不稳定。杂原子掺杂虽然可以引入磁性,但其基本性质特别是电-磁耦合性质却很少被揭示。本文采用化学气相沉积的方法制备了掺杂铁(Fe)和掺杂钒(V)的MoS2薄膜。通过对Fe掺杂和V掺杂MoS2的结构和电学性质的研究,发现Fe和V掺杂都会降低电子浓度,表现为p型掺杂效应。值得注意的是,v掺杂的MoS2表现出p型导电行为。虽然杂原子掺杂后载流子迁移率降低,但Fe和V的掺杂都能使MoS2具有磁性,其中两种MoS2晶体管的转移曲线都表现出较强的磁依赖行为。结果表明,铁掺杂MoS2的磁响应可以从~0.2 nA/T调谐到~1.3 nA/T,其可调性远高于v掺杂MoS2。最后,利用磁力显微镜对其局部磁性能进行了分析。铁掺杂二硫化钼形成的磁畴结构与典型的磁信号无关。这项研究为设计新型磁电器件开辟了新的潜力。
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Growth of Fe-doped and V-doped MoS2 and their magnetic-electrical effects

Magnetism in two-dimensional (2D) materials has attracted much attention recently. However, intrinsic magnetic 2D materials are rare and mostly unstable in ambient. Although heteroatom doping can introduce magnetism, the basic property especially the electrical-magnetic coupling property has been rarely revealed. Herein, both iron (Fe)-doped and vanadium (V)-doped MoS2 films were grown by chemical vapor deposition. Through studying the structure and electrical property of Fe-doped and V-doped MoS2, it was found that both Fe and V doping would decrease the electron concentration, exhibiting a p-type doping effect. Significantly, V-doped MoS2 displays a p-type conduction behavior. Although the carrier mobility decreases after heteroatom doping, both Fe and V doping could endow MoS2 with magnetism, in which the transfer curves of both MoS2 transistors exhibit a strong magnetic-dependent behavior. It is found that the magnetic response of Fe-doped MoS2 can be tuned from ~0.2 ​nA/T to ~1.3 ​nA/T, with the tunability much larger than that of V-doped MoS2. At last, the magnetic mechanism is discussed with the local magnetic property performed by magnetic force microscopy. The typical morphology-independent magnetic signal demonstrates the formed magnetic domain structure in Fe-doped MoS2. This study opens new potential to design novel magnetic-electrical devices.

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来源期刊
Journal of Electronic Science and Technology
Journal of Electronic Science and Technology Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
0.00%
发文量
1362
审稿时长
99 days
期刊介绍: JEST (International) covers the state-of-the-art achievements in electronic science and technology, including the most highlight areas: ¨ Communication Technology ¨ Computer Science and Information Technology ¨ Information and Network Security ¨ Bioelectronics and Biomedicine ¨ Neural Networks and Intelligent Systems ¨ Electronic Systems and Array Processing ¨ Optoelectronic and Photonic Technologies ¨ Electronic Materials and Devices ¨ Sensing and Measurement ¨ Signal Processing and Image Processing JEST (International) is dedicated to building an open, high-level academic journal supported by researchers, professionals, and academicians. The Journal has been fully indexed by Ei INSPEC and has published, with great honor, the contributions from more than 20 countries and regions in the world.
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