Yunki Kim, Kyu-Jin Jo, Jin-Su Oh, Cheol-Woong Yang
{"title":"大阻窗ReRAM中Ta/TaxMnyOz/Pt结构的双极电阻开关特性","authors":"Yunki Kim, Kyu-Jin Jo, Jin-Su Oh, Cheol-Woong Yang","doi":"10.1007/s13391-023-00440-5","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, a resistive random-access memory device based on a Ta/Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub>/Pt metal–insulator–metal structure was fabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance of more than 300 cycles and robust retention up to 10<sup>4</sup> s at room temperature. Moreover, the device had a low forming voltage and a resistance window of ~ 10<sup>3</sup>. The conduction mechanism in each resistance state of the device was analyzed through current–voltage curve fitting. It was confirmed that the primary conduction mechanisms were ohmic and Poole–Frenkel conduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device through transmission electron microscopy, it was found that the Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer was deposited in amorphous form. The composition and chemical bonding state of the Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer were also analyzed using X-ray photoelectron spectroscopy. With these characteristics, the amorphous Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer has strong potential for nonvolatile memory applications.</p><h3>Graphical Abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 1","pages":"26 - 32"},"PeriodicalIF":2.1000,"publicationDate":"2023-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window\",\"authors\":\"Yunki Kim, Kyu-Jin Jo, Jin-Su Oh, Cheol-Woong Yang\",\"doi\":\"10.1007/s13391-023-00440-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, a resistive random-access memory device based on a Ta/Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub>/Pt metal–insulator–metal structure was fabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance of more than 300 cycles and robust retention up to 10<sup>4</sup> s at room temperature. Moreover, the device had a low forming voltage and a resistance window of ~ 10<sup>3</sup>. The conduction mechanism in each resistance state of the device was analyzed through current–voltage curve fitting. It was confirmed that the primary conduction mechanisms were ohmic and Poole–Frenkel conduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device through transmission electron microscopy, it was found that the Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer was deposited in amorphous form. The composition and chemical bonding state of the Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer were also analyzed using X-ray photoelectron spectroscopy. With these characteristics, the amorphous Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer has strong potential for nonvolatile memory applications.</p><h3>Graphical Abstract</h3>\\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"20 1\",\"pages\":\"26 - 32\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2023-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-023-00440-5\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00440-5","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window
In this study, a resistive random-access memory device based on a Ta/TaxMnyOz/Pt metal–insulator–metal structure was fabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance of more than 300 cycles and robust retention up to 104 s at room temperature. Moreover, the device had a low forming voltage and a resistance window of ~ 103. The conduction mechanism in each resistance state of the device was analyzed through current–voltage curve fitting. It was confirmed that the primary conduction mechanisms were ohmic and Poole–Frenkel conduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device through transmission electron microscopy, it was found that the TaxMnyOz layer was deposited in amorphous form. The composition and chemical bonding state of the TaxMnyOz layer were also analyzed using X-ray photoelectron spectroscopy. With these characteristics, the amorphous TaxMnyOz layer has strong potential for nonvolatile memory applications.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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