{"title":"一种用四晶体管设计和实现二输入异或门的新方法","authors":"H. Maity","doi":"10.2174/1876402912666200309120205","DOIUrl":null,"url":null,"abstract":"\n\nThis paper proposed the design and implementation of a 2-input XOR gate using 4-\ntransistor.\n\n\n\nThe XOR gate can be designed using NOT gate and 2:1 multiplexer. The NOT gate is designed\nusing two metal–oxide–semiconductor field-effect transistors MOSFETs and an approximate\n2:1 multiplexer. The 2:1 multiplexer is designed using two MOSFETs. So, an XOR gate can be designed\nusing four transistors.\n\n\n\nThe proposed work theoretically and experimentally describes the 2-input XOR gate using 4-\ntransistor. The proposed work was verified using Xilinx (ISE Design Suite).\n","PeriodicalId":18543,"journal":{"name":"Micro and Nanosystems","volume":"12 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor\",\"authors\":\"H. Maity\",\"doi\":\"10.2174/1876402912666200309120205\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n\\nThis paper proposed the design and implementation of a 2-input XOR gate using 4-\\ntransistor.\\n\\n\\n\\nThe XOR gate can be designed using NOT gate and 2:1 multiplexer. The NOT gate is designed\\nusing two metal–oxide–semiconductor field-effect transistors MOSFETs and an approximate\\n2:1 multiplexer. The 2:1 multiplexer is designed using two MOSFETs. So, an XOR gate can be designed\\nusing four transistors.\\n\\n\\n\\nThe proposed work theoretically and experimentally describes the 2-input XOR gate using 4-\\ntransistor. The proposed work was verified using Xilinx (ISE Design Suite).\\n\",\"PeriodicalId\":18543,\"journal\":{\"name\":\"Micro and Nanosystems\",\"volume\":\"12 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanosystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2174/1876402912666200309120205\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanosystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/1876402912666200309120205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor
This paper proposed the design and implementation of a 2-input XOR gate using 4-
transistor.
The XOR gate can be designed using NOT gate and 2:1 multiplexer. The NOT gate is designed
using two metal–oxide–semiconductor field-effect transistors MOSFETs and an approximate
2:1 multiplexer. The 2:1 multiplexer is designed using two MOSFETs. So, an XOR gate can be designed
using four transistors.
The proposed work theoretically and experimentally describes the 2-input XOR gate using 4-
transistor. The proposed work was verified using Xilinx (ISE Design Suite).