0.13-μm硅锗四路组合的A波段功率放大器

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Microwave and Wireless Components Letters Pub Date : 2022-11-01 DOI:10.1109/LMWC.2022.3178933

Ibrahim Kagan Aksoyak, Matthias Möck, M. Kaynak, A. Ulusoy

{"title":"0.13-μm硅锗四路组合的A波段功率放大器","authors":"Ibrahim Kagan Aksoyak, Matthias Möck, M. Kaynak, A. Ulusoy","doi":"10.1109/LMWC.2022.3178933","DOIUrl":null,"url":null,"abstract":"This letter presents a four-way power combined <inline-formula> <tex-math notation=\"LaTeX\">$D$ </tex-math></inline-formula>-band power amplifier (PA) in 0.13-<inline-formula> <tex-math notation=\"LaTeX\">$\\mu \\text{m}$ </tex-math></inline-formula> SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si) <inline-formula> <tex-math notation=\"LaTeX\">$D$ </tex-math></inline-formula>-band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1343-1346"},"PeriodicalIF":2.9000,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe\",\"authors\":\"Ibrahim Kagan Aksoyak, Matthias Möck, M. Kaynak, A. Ulusoy\",\"doi\":\"10.1109/LMWC.2022.3178933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a four-way power combined <inline-formula> <tex-math notation=\\\"LaTeX\\\">$D$ </tex-math></inline-formula>-band power amplifier (PA) in 0.13-<inline-formula> <tex-math notation=\\\"LaTeX\\\">$\\\\mu \\\\text{m}$ </tex-math></inline-formula> SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si) <inline-formula> <tex-math notation=\\\"LaTeX\\\">$D$ </tex-math></inline-formula>-band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.\",\"PeriodicalId\":13130,\"journal\":{\"name\":\"IEEE Microwave and Wireless Components Letters\",\"volume\":\"32 1\",\"pages\":\"1343-1346\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2022-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Microwave and Wireless Components Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1109/LMWC.2022.3178933\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Microwave and Wireless Components Letters","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/LMWC.2022.3178933","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 1

摘要

本文介绍了一种采用0.13- $\mu \text{m}$ SiGe技术的四路功率组合$D$波段功率放大器(PA)。通过在共发射极(CE)和共基极(CB)器件之间增加一个额外的级间网络，改进了传统的级联编码拓扑结构。进一步的技术，如功率组合和自适应偏置电路，被实现以提高功率产生和放大器的效率。所实现的放大器在130 GHz时的饱和输出功率为19.6 dBm，最大功率增加效率(PAE)为9.5%，在同类技术中已报道的硅(Si) D波段放大器中具有领先的性能。小信号增益峰值为16db，扩音器的3db带宽为18ghz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe

This letter presents a four-way power combined

$D$

-band power amplifier (PA) in 0.13-

$\mu \text{m}$

SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si)

$D$

-band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Microwave and Wireless Components Letters 工程技术-工程：电子与电气

自引率

13.30%

发文量

376

审稿时长

3.0 months

期刊介绍： The IEEE Microwave and Wireless Components Letters (MWCL) publishes four-page papers (3 pages of text + up to 1 page of references) that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, medical and industrial activities. Microwave theory and techniques relates to electromagnetic waves in the frequency range of a few MHz and a THz; other spectral regions and wave types are included within the scope of the MWCL whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.