微波电流辅助烧结β-SiC纳米粉体的初步研究

IF 1.7 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Advances in Natural Sciences: Nanoscience and Nanotechnology Pub Date : 2023-08-10 DOI:10.1088/2043-6262/acebd6
H. K. M. Al-Jothery, T. Albarody, N. Sultan, H. G. Mohammed, P. Megat-Yusoff, N. Almuramady, W. J. A. AL-Nidawi
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引用次数: 0

摘要

碳化硅在电子等领域有着广泛的应用,是一种重要的结构材料。在烧结过程中,杂质对纳米碳化硅的均质性有不利的影响,尤其是二氧化硅。因此,采用微波电流辅助烧结工艺对纳米碳化硅粉体进行固结。利用场发射扫描电镜(FESEM)、x射线能谱仪(EDS)和x射线衍射仪(XRD)对纳米粉体和烧结样品进行了表征。结果表明:经过处理和未经过处理的sic纳米粉烧结试样的平均晶粒尺寸分别为331 nm和428 nm;经过处理和未处理的sic纳米粉烧结试样的相对密度分别为97.1%和93.8%。综上所述,烧结SiC的纳米结构是微波电流辅助烧结技术的基准。
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Sintering β-SiC nanopowder using novel microwave-current assisted sintering technique: preliminary study
Silicon carbide is a crucial structure material because of its wide applications in different fields, such as electronics. The impurities have negative impact on the homogenous sinterability of nano SiC during the sintering process, especially the silicon dioxide. So, the consolidation of SiC nanopowders was conducted by the microwave-current assisted sintering process. Field emission scanning electron microscope (FESEM), energy dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD) were utilised to examine the nanopowders and sintered samples of SiC. The results showed that the smallest average grain sizes of sintered specimens of treated and untreated-SiC nanopowders were 331 and 428 nm, respectively. The relative densities of sintered specimens of treated and untreated-SiC nanopowders were around 97.1% and 93.8%, respectively. In conclusion, the nanostructure of sintered SiC was the benchmark of the microwave-current assisted sintering technique.
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Advances in Natural Sciences: Nanoscience and Nanotechnology
Advances in Natural Sciences: Nanoscience and Nanotechnology NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
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