{"title":"一种采用SiGe PIN二极管谐振负载的d波段反射式移相器","authors":"Sunil G. Rao, J. Cressler","doi":"10.1109/LMWC.2022.3175450","DOIUrl":null,"url":null,"abstract":"This work presents a D-band phase shifter which utilizes a one-bit phase inverter (PI), followed by two cascaded reflective-type phase shifters (RTPSs). The PI uses two identical cascode amplifiers and a triaxial balun for compact form factor and to provide identical loading in both states. The RTPSs use SiGe PIN diodes for their resonant loads due to their naturally high-Q and tuning range. The phase shifter is implemented in a 90-nm SiGe BiCMOS technology platform, and achieves insertion loss < 5.5 dB with a 360° phase shift range, for frequencies up to 145 GHz. By using dual voltage control, the insertion loss variation is kept within ±0.9 dB by selecting the appropriate points. This phase shifter achieves competitive performance in terms of insertion loss, power consumption, and amplitude error while operating over a wide bandwidth.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1191-1194"},"PeriodicalIF":2.9000,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A D-Band Reflective-Type Phase Shifter Using a SiGe PIN Diode Resonant Load\",\"authors\":\"Sunil G. Rao, J. Cressler\",\"doi\":\"10.1109/LMWC.2022.3175450\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a D-band phase shifter which utilizes a one-bit phase inverter (PI), followed by two cascaded reflective-type phase shifters (RTPSs). The PI uses two identical cascode amplifiers and a triaxial balun for compact form factor and to provide identical loading in both states. The RTPSs use SiGe PIN diodes for their resonant loads due to their naturally high-Q and tuning range. The phase shifter is implemented in a 90-nm SiGe BiCMOS technology platform, and achieves insertion loss < 5.5 dB with a 360° phase shift range, for frequencies up to 145 GHz. By using dual voltage control, the insertion loss variation is kept within ±0.9 dB by selecting the appropriate points. This phase shifter achieves competitive performance in terms of insertion loss, power consumption, and amplitude error while operating over a wide bandwidth.\",\"PeriodicalId\":13130,\"journal\":{\"name\":\"IEEE Microwave and Wireless Components Letters\",\"volume\":\"32 1\",\"pages\":\"1191-1194\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2022-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Microwave and Wireless Components Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1109/LMWC.2022.3175450\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Microwave and Wireless Components Letters","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/LMWC.2022.3175450","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A D-Band Reflective-Type Phase Shifter Using a SiGe PIN Diode Resonant Load
This work presents a D-band phase shifter which utilizes a one-bit phase inverter (PI), followed by two cascaded reflective-type phase shifters (RTPSs). The PI uses two identical cascode amplifiers and a triaxial balun for compact form factor and to provide identical loading in both states. The RTPSs use SiGe PIN diodes for their resonant loads due to their naturally high-Q and tuning range. The phase shifter is implemented in a 90-nm SiGe BiCMOS technology platform, and achieves insertion loss < 5.5 dB with a 360° phase shift range, for frequencies up to 145 GHz. By using dual voltage control, the insertion loss variation is kept within ±0.9 dB by selecting the appropriate points. This phase shifter achieves competitive performance in terms of insertion loss, power consumption, and amplitude error while operating over a wide bandwidth.
期刊介绍:
The IEEE Microwave and Wireless Components Letters (MWCL) publishes four-page papers (3 pages of text + up to 1 page of references) that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, medical and industrial activities. Microwave theory and techniques relates to electromagnetic waves in the frequency range of a few MHz and a THz; other spectral regions and wave types are included within the scope of the MWCL whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.