V形边缘图案化AGNR单元的能带结构和量子输运特性

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2023-09-25 DOI:10.1007/s10825-023-02096-8
Bikramjit Basumatary, Agile Mathew
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引用次数: 0

摘要

我们研究了六臂椅石墨烯纳米带结构的电子和传输特性是如何通过在其边缘引入对称和非对称几何V形切口来改变的。基于数值非平衡格林函数方法的紧束缚模型用于计算传输特性,如局域态密度、传输和电流-电压特性。我们报道了在边缘图案化之后,某些拓扑结构存在几乎平坦的中间带。这些频带在低偏置电压下产生非零传输。我们揭示了这种传输是如何随着通道的宽度、长度和偏置以及触点的温度而变化的。对于不存在平坦中间带的结构,我们展示了如何通过改变修饰的晶胞的宽度和长度来调节它们的带隙。
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Bandstructure and quantum transport properties of AGNR unit cells with V-shaped edge patterning

We investigate how the electronic and transport properties of six arm-chair graphene nanoribbon-based structures are modified with the introduction of symmetrical and asymmetrical geometrical V-cuts on their edges. A tight-binding model based on numerical non-equilibrium Green’s function method is used to compute the transport properties such as local density of states, transmission and current–voltage characteristics. We report the existence of nearly flat mid-bands for certain topologies after edge patterning. These bands give rise to non-zero transmission at low bias voltages. We uncover how this transmission varies with width, length, and biasing of the channel and also the temperature of the contacts. For structures in which flat mid-bands are absent, we show how their band gaps could be tuned by varying the width and length of the modified unit cells.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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