一种新型紧凑隔离结构的600V栅极驱动集成电路

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117671

Jing Zhu, Qinsong Qian, Weifeng Sun, Shengli Lu, Yanzhang Lin

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引用次数: 3

摘要

提出了一种用于高压栅极驱动集成电路的新型紧凑隔离结构。与传统的隔离结构相比，该结构通过在位于LDMOS (Lateral double spreading MOS)和HVJT (high voltage junction termination)之间的P-well区域中加入N-well岛，可以在更小的面积下获得相同的击穿能力。此外，所提出的结构在LDMOS与High-side之间不存在穿孔风险。最后实现了600V的隔离结构，其漂移长度仅为49µm。

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A novel compact isolated structure for 600V Gate Drive IC

A novel compact isolation structure for high voltage Gate Drive IC is proposed in this paper. As compared with the conventional isolation structure, the proposed structure can achieve the same breakdown capacity with smaller area by adding N-well islands into P-well region which located between LDMOS (Lateral double diffused MOS) and HVJT (high voltage junction termination) region. Moreover, there is no punch through risk in the region between LDMOS and High-side in proposed structure. Finally, a 600V isolation structure is realized with its drift length is only 49µm.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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