一种新型的门全能超薄p沟道多晶硅TFT，具有硅纳米晶体晶体管和快闪存储器的功能

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243321

Hung-Bin Chen, Shih-Han Lin, Jia-Jiun Wu, Yung-Chun Wu, Chun-Yen Chang

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摘要

成功地展示了一种新型的门全能超薄p沟道多晶硅TFT，它具有硅纳米晶体晶体管和快闪存储器的功能。这个过程很简单，不需要面膜。对于3 nm厚的通道器件，可以实现88 mV/dec的S.S.和大于108的离子/ off比。提出了一种极低的带对带隧道诱导热电子注入隧道(BBHE)运行电压和优异的保持性能。

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A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals

A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals have been successfully demonstrated. The process is simple and mask free. For the 3-nm-thick channel devices, the S.S. of 88 mV/dec and Ion/Ioff ratio of more than 108 can be achieved. Extreme low applied voltage for band-to-band-tunneling-induced hot electron injection tunneling (BBHE) operation and excellent retention are proposed.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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