Pt/SrTiO/sub - 3/肖特基结具有优异的电阻开关特性，可用于多位非易失性存储器

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609464

H. Sim, Hyejung Choi, Dongsoo Lee, M. Chang, Dooho Choi, Y. Son, Eun-Hong Lee, Wonjoo Kim, Yoondong Park, I. Yoo, H. Hwang

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引用次数: 46

摘要

我们研究了单晶nb掺杂SrTiO3在非易失性存储器应用中的潜在用途。与多晶氧化物(Nb2O5, ZrO x和Cr-SrTiO3)相比，Pt/单晶Nb: srtio3肖特基结具有优异的记忆特性，包括设置/复位偏置均匀性，模对模再现性，高温下的数据保留性，循环应力下的可靠性和多比特操作特性。这种开关机制可以用界面电荷捕获对肖特基势垒高度的调制来解释

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Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application

We have investigated single crystal Nb-doped SrTiO₃ in terms of its potential utility in nonvolatile memory applications. Compared with polycrystalline oxide (Nb₂O₅, ZrO _x and Cr-SrTiO₃), the Pt/single crystal Nb:SrTiO ₃ Schottky junction exhibits excellent memory characteristics including uniformity of set/reset bias, die-to-die reproducibility, data retention at high temperature, reliability under cycle stress, and multi-bit operation characteristics. The switching mechanism might be explained by modulation of the Schottky barrier height by charge trapping at the interface

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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