γ-APTES/二氧化硅纳米颗粒生物纳米复合材料的纳米级泄漏表征

Po-Yen Hsu, Jing-Jenn Lin, Jheng-Jia Jhuang, You-Lin Wu
{"title":"γ-APTES/二氧化硅纳米颗粒生物纳米复合材料的纳米级泄漏表征","authors":"Po-Yen Hsu, Jing-Jenn Lin, Jheng-Jia Jhuang, You-Lin Wu","doi":"10.1109/EDSSC.2011.6117608","DOIUrl":null,"url":null,"abstract":"This work proposes the nano-scale leakage characterizations for post-UV irradiated membrane of a polydimethylsiloxane (PDMS)-treated hydrophobic fumed silica nanoparticles (NPs) and 3-aminopropyltriethoxysilane mixture (γ-APTES+NPs+UV) by conductive atomic-force-microscopy (C-AFM). We found the leakage characterizations of the γ-APTES+NPs+UV are similar to those of dielectric material. Our results show that prolonged UV illumination (120s) and 100: 1 γ-APTES/ silica NPs mixing ratio result in the lowest leakage current and highest breakdown voltage.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":"6 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Nano-scale leakage characterizations of the γ-APTES/ silica nanoparticles bionanocomposite\",\"authors\":\"Po-Yen Hsu, Jing-Jenn Lin, Jheng-Jia Jhuang, You-Lin Wu\",\"doi\":\"10.1109/EDSSC.2011.6117608\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work proposes the nano-scale leakage characterizations for post-UV irradiated membrane of a polydimethylsiloxane (PDMS)-treated hydrophobic fumed silica nanoparticles (NPs) and 3-aminopropyltriethoxysilane mixture (γ-APTES+NPs+UV) by conductive atomic-force-microscopy (C-AFM). We found the leakage characterizations of the γ-APTES+NPs+UV are similar to those of dielectric material. Our results show that prolonged UV illumination (120s) and 100: 1 γ-APTES/ silica NPs mixing ratio result in the lowest leakage current and highest breakdown voltage.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":\"6 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117608\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117608","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本研究提出了利用导电原子力显微镜(C-AFM)对聚二甲基硅氧烷(PDMS)处理的疏水气相二氧化硅纳米颗粒(NPs)和3-氨基丙基三乙氧基硅烷混合物(γ-APTES+NPs+UV)的紫外辐照后膜进行纳米级泄漏表征。我们发现γ-APTES+NPs+UV的泄漏特性与介电材料相似。结果表明,长时间的紫外照射(120秒)和100:1的γ-APTES/二氧化硅NPs混合比可以产生最低的泄漏电流和最高的击穿电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Nano-scale leakage characterizations of the γ-APTES/ silica nanoparticles bionanocomposite
This work proposes the nano-scale leakage characterizations for post-UV irradiated membrane of a polydimethylsiloxane (PDMS)-treated hydrophobic fumed silica nanoparticles (NPs) and 3-aminopropyltriethoxysilane mixture (γ-APTES+NPs+UV) by conductive atomic-force-microscopy (C-AFM). We found the leakage characterizations of the γ-APTES+NPs+UV are similar to those of dielectric material. Our results show that prolonged UV illumination (120s) and 100: 1 γ-APTES/ silica NPs mixing ratio result in the lowest leakage current and highest breakdown voltage.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Copyright page Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate 3D modeling of CMOS image sensor: From process to opto-electronic response A novel compact isolated structure for 600V Gate Drive IC Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1