降低了完全耗尽薄盒上硅(SOTB) mosfet的漏极电流可变性

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243344

T. Mizutani, Y. Yamamoto, H. Makiyama, T. Tsunomura, T. Iwamatsu, H. Oda, N. Sugii, T. Hiramoto

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引用次数: 11

摘要

通过将SOTB mosfet的漏极电流变异性分解为电流变异性分量，分析了SOTB漏极电流变异性，并与传统的体积mosfet进行了比较。研究发现，SOTB mosfet的漏极电流可变性在很大程度上被抑制，这不仅是因为降低了VTH可变性，还因为减小了本征通道导致的电流起始电压(COV)可变性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reduced drain current variability in fully depleted silicon-on-thin-BOX (SOTB) MOSFETs

Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs are analyzed by decomposing into current variability components and compared with conventional bulk MOSFETs. It is found that drain current variability in SOTB MOSFETs is largely suppressed thanks to not only reduced VTH variability but also reduced current-onset voltage (COV) variability due to intrinsic channel.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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