A. Tripathi, K. Mainali, S. Madhusoodhanan, D. Patel, A. Kadavelugu, S. Hazra, S. Bhattacharya, K. Hatua
{"title":"基于15kV SiC IGBT的柔性三相双有源桥式隔离DC-DC变换器实现MVDC微电网","authors":"A. Tripathi, K. Mainali, S. Madhusoodhanan, D. Patel, A. Kadavelugu, S. Hazra, S. Bhattacharya, K. Hatua","doi":"10.1109/ECCE.2015.7310462","DOIUrl":null,"url":null,"abstract":"The Dual Active Bridge (DABC) dc-dc converter is an integral part of the recently popular Medium-Voltage (MV) dc micro-grid application due to its high-power density. The advent of 15kV SiC IGBT and 10kV SiC MOSFET, has enabled a non-cascaded MV and Medium-Frequency (MF) DABC converter which is expected to have higher MTBF than the cascaded H-bridge topology due to relatively small number of switches. A composite DABC three-level three-phase topology earlier proposed for MV-MF application, has dual secondary side bridges to meet the rated load conditions. The duty-ratio control of the primary and the independent operation of dual secondary bridges as a single active bridge, can be utilized to solve the light load ZVS problem. This paper presents flexible operating modes of this MV DABC for ZVS and higher efficiency. The MV DABC simulations are presented to bring out the advantages of this topology in wide range load and voltage-ratio conditions. This paper reports 8kV experimental validation of this DABC while using 15kV/40A SiC IGBTs on the MV side.","PeriodicalId":6654,"journal":{"name":"2015 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"156 1","pages":"5708-5715"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"MVDC microgrids enabled by 15kV SiC IGBT based flexible three phase dual active bridge isolated DC-DC converter\",\"authors\":\"A. Tripathi, K. Mainali, S. Madhusoodhanan, D. Patel, A. Kadavelugu, S. Hazra, S. Bhattacharya, K. Hatua\",\"doi\":\"10.1109/ECCE.2015.7310462\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Dual Active Bridge (DABC) dc-dc converter is an integral part of the recently popular Medium-Voltage (MV) dc micro-grid application due to its high-power density. The advent of 15kV SiC IGBT and 10kV SiC MOSFET, has enabled a non-cascaded MV and Medium-Frequency (MF) DABC converter which is expected to have higher MTBF than the cascaded H-bridge topology due to relatively small number of switches. A composite DABC three-level three-phase topology earlier proposed for MV-MF application, has dual secondary side bridges to meet the rated load conditions. The duty-ratio control of the primary and the independent operation of dual secondary bridges as a single active bridge, can be utilized to solve the light load ZVS problem. This paper presents flexible operating modes of this MV DABC for ZVS and higher efficiency. The MV DABC simulations are presented to bring out the advantages of this topology in wide range load and voltage-ratio conditions. This paper reports 8kV experimental validation of this DABC while using 15kV/40A SiC IGBTs on the MV side.\",\"PeriodicalId\":6654,\"journal\":{\"name\":\"2015 IEEE Energy Conversion Congress and Exposition (ECCE)\",\"volume\":\"156 1\",\"pages\":\"5708-5715\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Energy Conversion Congress and Exposition (ECCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCE.2015.7310462\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Energy Conversion Congress and Exposition (ECCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCE.2015.7310462","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
摘要
双有源桥式(DABC) dc-dc变换器因其高功率密度而成为近年来流行的中压(MV)直流微电网应用的重要组成部分。15kV SiC IGBT和10kV SiC MOSFET的出现,使得非级联MV和中频(MF) DABC转换器成为可能,由于开关数量相对较少,预计比级联h桥拓扑具有更高的MTBF。先前提出的用于MV-MF应用的复合DABC三电平三相拓扑结构具有双次侧桥以满足额定负载条件。通过控制主桥和双次桥作为单有源桥独立运行的占空比,可以解决轻载ZVS问题。本文介绍了该系统灵活的工作方式和较高的效率。通过MV - DABC仿真,验证了该拓扑在大范围负载和电压比条件下的优势。本文报道了该DABC在中频侧使用15kV/40A SiC igbt时的8kV实验验证。
MVDC microgrids enabled by 15kV SiC IGBT based flexible three phase dual active bridge isolated DC-DC converter
The Dual Active Bridge (DABC) dc-dc converter is an integral part of the recently popular Medium-Voltage (MV) dc micro-grid application due to its high-power density. The advent of 15kV SiC IGBT and 10kV SiC MOSFET, has enabled a non-cascaded MV and Medium-Frequency (MF) DABC converter which is expected to have higher MTBF than the cascaded H-bridge topology due to relatively small number of switches. A composite DABC three-level three-phase topology earlier proposed for MV-MF application, has dual secondary side bridges to meet the rated load conditions. The duty-ratio control of the primary and the independent operation of dual secondary bridges as a single active bridge, can be utilized to solve the light load ZVS problem. This paper presents flexible operating modes of this MV DABC for ZVS and higher efficiency. The MV DABC simulations are presented to bring out the advantages of this topology in wide range load and voltage-ratio conditions. This paper reports 8kV experimental validation of this DABC while using 15kV/40A SiC IGBTs on the MV side.