D. Ohori, M. Murata, A. Yamamoto, K. Endo, Min-Hui Chuang, Ming-Yi Lee, Yiming Li, J. Tarng, Yao-Jen Lee, S. Samukawa
{"title":"用于热管理纳米器件的硅纳米柱/SiGe复合结构","authors":"D. Ohori, M. Murata, A. Yamamoto, K. Endo, Min-Hui Chuang, Ming-Yi Lee, Yiming Li, J. Tarng, Yao-Jen Lee, S. Samukawa","doi":"10.1109/NANO51122.2021.9514289","DOIUrl":null,"url":null,"abstract":"We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"2015 1","pages":"199-202"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices\",\"authors\":\"D. Ohori, M. Murata, A. Yamamoto, K. Endo, Min-Hui Chuang, Ming-Yi Lee, Yiming Li, J. Tarng, Yao-Jen Lee, S. Samukawa\",\"doi\":\"10.1109/NANO51122.2021.9514289\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.\",\"PeriodicalId\":6791,\"journal\":{\"name\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"volume\":\"2015 1\",\"pages\":\"199-202\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO51122.2021.9514289\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO51122.2021.9514289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Si Nanopillar/SiGe Composite Structure for Thermally Managed Nano-devices
We have demonstrated a thermally managed Si nanopillar/SiGe composite structure. Our fabricated defect-free Si nanopillar channel structure showed a 1/100 times lower thermal conductivity than Si bulk thanks to the control of the phonon transports. The results of thermal conductivity measurements clarified that the nanopillar structure could eliminate electron-phonon scattering. As such, this structure represents a promising solution for advanced CMOS technologies.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
