隧道场效应晶体管低待机功率电荷阱快闪存储器

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243349

M. Han, Jong Ho Lee, D. Seo, Chong-Dae Park, Youngcheol Oh, I. Cho

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引用次数: 6

摘要

提出了一种基于TFET的SONOS存储器，以实现无漏电流特性。采用TFET的SONOS存储器具有极小的关断漏电流和良好的FN编程效率。通过器件仿真研究了程序特性和扰动特性。SONOS存储器与tefet有望成为低功耗移动设备的有希望的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low standby power charge trap flash memory with tunneling field effect transistor

SONOS memory with TFET is proposed to achieve off leakage current characteristics. SONOS memory with TFET exhibits extremely small off state leakage current, good FN program efficiency. Program characteristics and disturbance characteristics were investigated with device simulation. It is expected that SONOS memory with TFET can be a promising candidate for mobile devices with require low-power consumption.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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