大功率LED微弧氧化铝基板导热性能研究

Lei Jiu, Mingqiang Pan, Jun Sheng
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摘要

衬底散热是LED芯片散热的主要方式,提高其散热性能是解决大功率LED散热问题的关键。本文采用微弧氧化法在2024铝合金表面原位生长10-40μm氧化膜作为绝缘金属衬底(IMS)的绝缘层。采用3W LED灯珠作为热源,封装在传统散热基板和微弧氧化铝基板上。通过测温装置测量LED灯正常工作时封装基板两侧的温差和热阻。在满足实验条件的统一性和标准化的条件下,研究了不同封装基板的散热性能和氧化膜厚度为10-40μm的微弧氧化铝基板的导热效果。实验表明:(1)在600 mA恒流下,微弧氧化铝基板的温差比常规散热基板降低了511℃,基板的热阻降低了40% ~ 60%;(2)微弧氧化铝基板的热阻随着微弧氧化膜层厚度的减小而减小。当膜层厚度为10μm时,基板热阻较其他厚度降低10% ~ 40%。
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Study on Thermal Conductivity of Micro-arc Alumina Substrate for High Power LED
Substrate heat dissipation is the main way of heat dissipation of LED chip, and improving its heat dissipation performance is the key to solving the heat dissipation of high-power LED. In this paper, 10-40μm oxide film was grown in situ on the surface of 2024 aluminum alloy as the insulating layer of insulating metal substrate (IMS) by micro-arc oxidation. 3W LED lamp beads are used as heat sources to be packaged on the traditional heat-dissipating substrate and micro-arc alumina substrate. The temperature difference and thermal resistance on both sides of the packaging substrate when the LED lamp works normally are measured by temperature measuring device. The heat dissipation performance of different packaging substrate and the heat conduction effect of micro-arc alumina substrate with oxide film thickness of 10-40μm are studied under the condition of satisfying the unity and standardization of the experimental conditions. Experiments show that:(1) Under the constant current of 600 mA, the temperature difference of the micro-arc alumina substrate is reduced by 511 °C compared with the conventional heat-dissipating substrate, and the thermal resistance of the substrate is reduced by 40%-60%; (2) The thermal resistance of the micro-arc alumina substrate decreases with the decrease of the thickness of the micro-arc oxide film layer. When the film layer is 10μm, the thermal resistance of the substrate is reduced by 10%-40% compared with other thicknesses.
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