1.5 /spl μ /硅基光发射器的位错工程

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609533

M. Kittler, M. Reiche, T. Arguirov, W. Seifert, X. Yu

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引用次数: 7

摘要

提出了一种能够高效地以1.5 μ m的速度发光的硅发光二极管(LED)的新概念。它利用由硅晶片直接键合产生的明确的位错网络的辐射。通过调整硅晶片之间的错位，可以定制从网络发射的光的波长

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dislocation engineering for a silicon-based light emitter at 1.5 /spl mu/

A new concept for a Si light emitting diode (LED) capable of emitting at 1.5 mum efficiently is proposed. It utilizes radiation from a well-defined dislocation network created in a reproducible manner by Si wafer direct bonding. The wavelength of the light emitted from the network can be tailored by adjusting the misorientation between the Si wafers

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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