{"title":"SiO/sub - 2基栅氧化物击穿过程中氢的释放机理","authors":"J. Suñé, E. Wu","doi":"10.1109/IEDM.2005.1609359","DOIUrl":null,"url":null,"abstract":"The mechanisms of hydrogen release (HR) involved in the degradation and breakdown (BD) of SiO2-based gate dielectrics are studied by means of the analysis of charge to breakdown (QBD ) data versus electron energy, and comparing with scanning tunneling microscope (STM) experiments of H desorption from silicon surfaces. Our results reveal an important role of vibrational and electronic excitation mechanisms","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"4 1","pages":"388-391"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":"{\"title\":\"Mechanisms of hydrogen release in the breakdown of SiO/sub 2/-based gate oxides\",\"authors\":\"J. Suñé, E. Wu\",\"doi\":\"10.1109/IEDM.2005.1609359\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mechanisms of hydrogen release (HR) involved in the degradation and breakdown (BD) of SiO2-based gate dielectrics are studied by means of the analysis of charge to breakdown (QBD ) data versus electron energy, and comparing with scanning tunneling microscope (STM) experiments of H desorption from silicon surfaces. Our results reveal an important role of vibrational and electronic excitation mechanisms\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"4 1\",\"pages\":\"388-391\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"31\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609359\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mechanisms of hydrogen release in the breakdown of SiO/sub 2/-based gate oxides
The mechanisms of hydrogen release (HR) involved in the degradation and breakdown (BD) of SiO2-based gate dielectrics are studied by means of the analysis of charge to breakdown (QBD ) data versus electron energy, and comparing with scanning tunneling microscope (STM) experiments of H desorption from silicon surfaces. Our results reveal an important role of vibrational and electronic excitation mechanisms
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