{"title":"支持tcad的机器学习缺陷预测加速先进半导体器件故障分析","authors":"C. Teo, Kain Lu Low, V. Narang, A. Thean","doi":"10.1109/sispad.2019.8870440","DOIUrl":null,"url":null,"abstract":"In this work, we present a unique approach of combining TCAD modelling and machine learning to detect the defect locations of a bridging defect in a single-fin FinFET. The prediction of the defect location is guided by the predictive model consisting of Random Forest algorithm which is trained with the measureable electrical attributes from the I-V. High accuracy in predicting the defect location is achieved by the proposed scheme which can further enhance the FA success rate, expediting the cycle of design to product.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":"{\"title\":\"TCAD-Enabled Machine Learning Defect Prediction to Accelerate Advanced Semiconductor Device Failure Analysis\",\"authors\":\"C. Teo, Kain Lu Low, V. Narang, A. Thean\",\"doi\":\"10.1109/sispad.2019.8870440\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we present a unique approach of combining TCAD modelling and machine learning to detect the defect locations of a bridging defect in a single-fin FinFET. The prediction of the defect location is guided by the predictive model consisting of Random Forest algorithm which is trained with the measureable electrical attributes from the I-V. High accuracy in predicting the defect location is achieved by the proposed scheme which can further enhance the FA success rate, expediting the cycle of design to product.\",\"PeriodicalId\":6755,\"journal\":{\"name\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"2 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"31\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/sispad.2019.8870440\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/sispad.2019.8870440","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this work, we present a unique approach of combining TCAD modelling and machine learning to detect the defect locations of a bridging defect in a single-fin FinFET. The prediction of the defect location is guided by the predictive model consisting of Random Forest algorithm which is trained with the measureable electrical attributes from the I-V. High accuracy in predicting the defect location is achieved by the proposed scheme which can further enhance the FA success rate, expediting the cycle of design to product.