集成射频电源应用中65nm CMOS的性能和限制

J. Scholvin, D. Greenberg, J. D. del Alamo
{"title":"集成射频电源应用中65nm CMOS的性能和限制","authors":"J. Scholvin, D. Greenberg, J. D. del Alamo","doi":"10.1109/IEDM.2005.1609353","DOIUrl":null,"url":null,"abstract":"In this study, we present the first measurements of the RF power performance of 65 nm CMOS for different voltages and layouts. We demonstrate that the 65 nm technology node is capable of achieving PAE values greater than 50% at 8 GHz, with Pout scalable to about 17 dBm. This is of interest for many applications. Greater performance is expected by optimizing the layout to minimize interconnect resistance","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"224 1","pages":"369-372"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Performance and limitations of 65 nm CMOS for integrated RF power applications\",\"authors\":\"J. Scholvin, D. Greenberg, J. D. del Alamo\",\"doi\":\"10.1109/IEDM.2005.1609353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we present the first measurements of the RF power performance of 65 nm CMOS for different voltages and layouts. We demonstrate that the 65 nm technology node is capable of achieving PAE values greater than 50% at 8 GHz, with Pout scalable to about 17 dBm. This is of interest for many applications. Greater performance is expected by optimizing the layout to minimize interconnect resistance\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"224 1\",\"pages\":\"369-372\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

摘要

在这项研究中,我们首次测量了65nm CMOS在不同电压和布局下的射频功率性能。我们证明了65nm技术节点能够在8ghz下实现大于50%的PAE值,Pout可扩展到约17dbm。这是许多应用程序都感兴趣的。通过优化布局以最小化互连电阻,期望获得更高的性能
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Performance and limitations of 65 nm CMOS for integrated RF power applications
In this study, we present the first measurements of the RF power performance of 65 nm CMOS for different voltages and layouts. We demonstrate that the 65 nm technology node is capable of achieving PAE values greater than 50% at 8 GHz, with Pout scalable to about 17 dBm. This is of interest for many applications. Greater performance is expected by optimizing the layout to minimize interconnect resistance
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
High performance CMOSFET technology for 45nm generation and scalability of stress-induced mobility enhancement technique Light emitting silicon nanostructures A 65nm NOR flash technology with 0.042/spl mu/m/sup 2/ cell size for high performance multilevel application Interface states as an active component for 20 nm gate-length planar MOSFET with electrostatic channel extension (ESCE) An intra-chip electro-optical channel based on CMOS single photon detectors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1