磷扩散LPCVD多晶硅低压隧道氧化物钝化触点的优化与表征

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Pub Date : 2018-06-01 DOI:10.1109/PVSC.2018.8547448

K. Fong, T. Kho, Wensheng Liang, T. Chong, M. Ernst, D. Walter, M. Stocks, E. Franklin, K. McIntosh, A. Blakers

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引用次数: 1

摘要

本文研究了低压原位热氧化作为n+多晶硅钝化接触结构的界面氧化物，获得了低于1 fA·cm-2的良好表面钝化效果和低于1 mΩ·cm2的接触电阻率。详细介绍了工艺优化的结果，显示了准确控制氧化条件的重要性，并展示了与电性能的相关性。此外，提出了一种利用对称光导衰减寿命样品制作接触电阻率结构的方法，并利用三维数值模拟方法提取了比接触电阻率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimization and Characterization of Phosphorus Diffused LPCVD Polysilicon Passivated Contacts with Low Pressure Tunnel Oxide

This work presents the investigation of low pressure in-situ thermal oxidation as the interfacial oxide for n+ polysilicon-oxide passivated contact structure, achieving excellent surface passivation below 1 fA·cm-2 and contact resistivity below 1 mΩ·cm2. The results from the process optimisation are presented in detail, showing the importance of accurate control of oxidation conditions, and presenting the correlation to the electrical properties. Additionally, a method of fabricating contact resistivity structures from symmetrical photoconductance decay lifetime samples, and the extraction of the specific contact resistivity using 3D numerical simulation is presented.

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2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

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