一个10Gb/s, 342fJ/bit的微环调制器发射器，带有开关电容预强调和65nm CMOS单片温度传感器

2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) Pub Date : 2016-06-15 DOI:10.1109/VLSIC.2016.7573541

S. Saeedi, A. Emami-Neyestanak

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引用次数: 7

摘要

本文提出了一种基于载波注入环调制器的CMOS-SiPh光发射机。它具有新颖的低功耗开关电容预强调，有效地补偿了调制器带宽限制。提出了一种利用单片PTAT传感器直接测量环温的波长稳定技术。光发射机在10Gb/s下的能量效率为342fJ/bit，波长稳定电路的功耗为0.29mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 10Gb/s, 342fJ/bit micro-ring modulator transmitter with switched-capacitor pre-emphasis and monolithic temperature sensor in 65nm CMOS

In this work, a CMOS-SiPh optical transmitter based on carrier-injection ring modulators is presented. It features a novel low-power switched-capacitor-based pre-emphasis that effectively compensates the modulator bandwidth limitation. A wavelength stabilization technique via direct measurement of ring temperature using a monolithic PTAT sensor is also presented. The optical transmitter achieves energy efficiency of 342fJ/bit at 10Gb/s and the wavelength stabilization circuit consumes 0.29mW.

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2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)

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