基于BiCMOS 55nm可切换注入锁定振荡器的e波段收发器45GHz/55GHz LO频率选择器

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC) Pub Date : 2015-11-02 DOI:10.1109/ESSCIRC.2015.7313843

J. González, V. Puyal, A. Siligaris, C. Jany, C. Dehos

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引用次数: 0

摘要

这项工作提出了一个毫米波频率选择器作为e波段收发器的LO发生器的核心。由混频器从单个50 GHz频率及其5 GHz子倍频产生的两个相距10 GHz的毫米波低频频率被发送到所建议的电路，该电路输出45 GHz或55 GHz的单频音调。该电路采用BiCMOS 55nm技术，结合55nm CMOS晶体管和具有fT和fmax ~300 GHz的SiGe hbt实现。该电路基于注入锁定振荡器，相位噪声@ 1MHz偏置为-110 dBc/Hz，输入增加了0 dB的多余相位噪声，功耗为53mW。

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A 45GHz/55GHz LO frequency selector for E-band transceivers based on switchable injection locked-oscillators in BiCMOS 55nm

This work presents a mmW frequency selector as the core of the LO generator for E-band transceivers. Two 10 GHz apart mmW LO frequencies generated by a mixer from a single 50 GHz frequency and its 5 GHz submultiple are sent to the proposed circuit that outputs a single frequency tone of either 45 GHz or 55 GHz. The circuit is realized in BiCMOS 55nm technology combining 55nm CMOS transistors and SiGe HBTs with fT and fmax ~300 GHz. The circuit is based on injection-locked oscillators, presents a phase noise @ 1MHz offset of -110 dBc/Hz with 0 dB of excess phase noise added to the input, and consumes 53mW.

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ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)

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