{"title":"用于硅异质结太阳能电池前透明导电氧化层的高迁移率氧化铟锌的表征","authors":"D. Quispe, Syeda Mohsin, A. Leilaeioun, Z. Holman","doi":"10.1109/PVSC.2018.8547716","DOIUrl":null,"url":null,"abstract":"Silicon heterojunction solar cells have a front transparent conductive oxide (TCO) layer serving an optical and electrical role to mitigate free carrier absorption and sheet resistance. A common optimization problem is the trade-off between fill factor and short-circuit current density when adjusting the carrier concentration of the TCO material. One way to circumvent this problem is to find high-mobility TCO materials and we contribute by performing a characterization of indium zinc oxide. We found that an optimum sample has a high-mobility of about 50 cm2/Vs with a sheet resistance of about 30- $40 \\Omega /\\mathrm {sq}$. For the same sample, absorbance in the infrared wavelength range can be 1–3%.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"51 1","pages":"3136-3138"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells\",\"authors\":\"D. Quispe, Syeda Mohsin, A. Leilaeioun, Z. Holman\",\"doi\":\"10.1109/PVSC.2018.8547716\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon heterojunction solar cells have a front transparent conductive oxide (TCO) layer serving an optical and electrical role to mitigate free carrier absorption and sheet resistance. A common optimization problem is the trade-off between fill factor and short-circuit current density when adjusting the carrier concentration of the TCO material. One way to circumvent this problem is to find high-mobility TCO materials and we contribute by performing a characterization of indium zinc oxide. We found that an optimum sample has a high-mobility of about 50 cm2/Vs with a sheet resistance of about 30- $40 \\\\Omega /\\\\mathrm {sq}$. For the same sample, absorbance in the infrared wavelength range can be 1–3%.\",\"PeriodicalId\":6558,\"journal\":{\"name\":\"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)\",\"volume\":\"51 1\",\"pages\":\"3136-3138\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2018.8547716\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2018.8547716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells
Silicon heterojunction solar cells have a front transparent conductive oxide (TCO) layer serving an optical and electrical role to mitigate free carrier absorption and sheet resistance. A common optimization problem is the trade-off between fill factor and short-circuit current density when adjusting the carrier concentration of the TCO material. One way to circumvent this problem is to find high-mobility TCO materials and we contribute by performing a characterization of indium zinc oxide. We found that an optimum sample has a high-mobility of about 50 cm2/Vs with a sheet resistance of about 30- $40 \Omega /\mathrm {sq}$. For the same sample, absorbance in the infrared wavelength range can be 1–3%.