用于硅异质结太阳能电池前透明导电氧化层的高迁移率氧化铟锌的表征

D. Quispe, Syeda Mohsin, A. Leilaeioun, Z. Holman
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摘要

硅异质结太阳能电池具有前端透明导电氧化物(TCO)层,用于光学和电学作用,以减轻自由载流子吸收和片材电阻。在调整TCO材料载流子浓度时,一个常见的优化问题是填充系数和短路电流密度之间的权衡。规避这个问题的一种方法是找到高迁移率的TCO材料,我们通过对氧化锌铟进行表征来做出贡献。我们发现最佳样品具有约50 cm2/Vs的高迁移率,片电阻约为30- $40 \Omega /\ mathm {sq}$。对于同一样品,红外波长范围内的吸光度可达1-3%。
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Characterizing high-mobility indium zinc oxide for the front transparent conductive oxide layer in silicon heterojunction solar cells
Silicon heterojunction solar cells have a front transparent conductive oxide (TCO) layer serving an optical and electrical role to mitigate free carrier absorption and sheet resistance. A common optimization problem is the trade-off between fill factor and short-circuit current density when adjusting the carrier concentration of the TCO material. One way to circumvent this problem is to find high-mobility TCO materials and we contribute by performing a characterization of indium zinc oxide. We found that an optimum sample has a high-mobility of about 50 cm2/Vs with a sheet resistance of about 30- $40 \Omega /\mathrm {sq}$. For the same sample, absorbance in the infrared wavelength range can be 1–3%.
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