{"title":"化学浴含c层金属/锗肖特基势垒调制","authors":"Wei Wang, Jing Wang, Mei Zhao, R. Liang, Jun Xu","doi":"10.1109/SNW.2012.6243359","DOIUrl":null,"url":null,"abstract":"We inserted a C-containing layer in a metal/Ge structure, using a chemical bath. This layer enabled the Schottky barrier height (SBH) to be modulated. The chemical bath with 1-octadecene and 1-dodecene were performed separately with Ge substrates. The ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge. Metal-induced gap states are alleviated and the pinned Fermi level is released. The SBH is lowered to 0.17 eV. This new formation method is promising and much less complex than traditional ones.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Metal/Ge Schottky barrier modulation with C-containing layer by chemical bath\",\"authors\":\"Wei Wang, Jing Wang, Mei Zhao, R. Liang, Jun Xu\",\"doi\":\"10.1109/SNW.2012.6243359\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We inserted a C-containing layer in a metal/Ge structure, using a chemical bath. This layer enabled the Schottky barrier height (SBH) to be modulated. The chemical bath with 1-octadecene and 1-dodecene were performed separately with Ge substrates. The ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge. Metal-induced gap states are alleviated and the pinned Fermi level is released. The SBH is lowered to 0.17 eV. This new formation method is promising and much less complex than traditional ones.\",\"PeriodicalId\":6402,\"journal\":{\"name\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2012.6243359\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Metal/Ge Schottky barrier modulation with C-containing layer by chemical bath
We inserted a C-containing layer in a metal/Ge structure, using a chemical bath. This layer enabled the Schottky barrier height (SBH) to be modulated. The chemical bath with 1-octadecene and 1-dodecene were performed separately with Ge substrates. The ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge. Metal-induced gap states are alleviated and the pinned Fermi level is released. The SBH is lowered to 0.17 eV. This new formation method is promising and much less complex than traditional ones.
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