−197dBc/Hz FOM 4.3 ghz VCO采用65nm CMOS中最小尺寸nmos交叉耦合晶体管对的可寻址阵列

Amit Jha, A. Ahmadi, S. Kshattry, T. Cao, K. Liao, G. Yeap, Y. Makris, K. O. Kenneth
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引用次数: 2

摘要

采用可寻址的交叉耦合最小尺寸NMOS晶体管对阵列,设计了一种用于65纳米CMOS加工后选择的4.3 ghz压控振荡器(VCO)。采用一种基于汉明距离的算法,利用约1500个阵列组合的相位噪声测量值来识别在4.3 ghz载波1 mhz偏移时相位噪声记录为-130dBc/Hz的组合,同时从1 v电源消耗5.2 mW。采用后加工选择的电路在其高频路径上的工作频率提高到5ghz。
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−197dBc/Hz FOM 4.3-GHz VCO Using an addressable array of minimum-sized nmos cross-coupled transistor pairs in 65-nm CMOS
A 4.3-GHz voltage controlled oscillator (VCO) using an addressable array of cross-coupled minimum size NMOS transistor pairs for post fabrication selection is demonstrated in 65-nm CMOS. An algorithm based on Hamming distance using the phase noise measurements of ~1,500 array combinations was used to identify combinations that have record phase noise of -130dBc/Hz at 1-MHz offset from a 4.3-GHz carrier, while consuming 5.2 mW from a 1-V supply. The operating frequency of circuits using post fabrication selection in its high frequency path is increased to 5 GHz.
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