{"title":"离子敏感场效应管中表面反应引起的界面电荷和化学噪声模型","authors":"Leandro Julian Mele, P. Palestri, L. Selmi","doi":"10.1109/SISPAD.2019.8870563","DOIUrl":null,"url":null,"abstract":"We present a model of arbitrary chemical reactions at the interface between a solid and an electrolyte, aimed at computing the interface charge build-up and surface potential shift of ion-sensitive FETs in the presence of interfering ions. An expression for the rms value of the surface charge fluctuation and the resulting uncertainty in the ion concentration is derived as well. Application to nanoelectronic ISFET-based sensors for ions and proteins is demonstrated.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs\",\"authors\":\"Leandro Julian Mele, P. Palestri, L. Selmi\",\"doi\":\"10.1109/SISPAD.2019.8870563\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a model of arbitrary chemical reactions at the interface between a solid and an electrolyte, aimed at computing the interface charge build-up and surface potential shift of ion-sensitive FETs in the presence of interfering ions. An expression for the rms value of the surface charge fluctuation and the resulting uncertainty in the ion concentration is derived as well. Application to nanoelectronic ISFET-based sensors for ions and proteins is demonstrated.\",\"PeriodicalId\":6755,\"journal\":{\"name\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"1 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2019.8870563\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870563","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs
We present a model of arbitrary chemical reactions at the interface between a solid and an electrolyte, aimed at computing the interface charge build-up and surface potential shift of ion-sensitive FETs in the presence of interfering ions. An expression for the rms value of the surface charge fluctuation and the resulting uncertainty in the ion concentration is derived as well. Application to nanoelectronic ISFET-based sensors for ions and proteins is demonstrated.
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