倒置模式下P+Poly/ pfet栅极氧化物击穿的综合研究

E. Wu, J. Suñé, W. Lai, A. Vayshenker, D. Harmon
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引用次数: 16

摘要

深入研究了P+多晶硅栅极/ pet器件在反转模式下的击穿(BD)特性和电子在SiO2薄膜上的传递。我们解决了在TOX>2nm的pet中常见的TBD/QBD极性依赖和较浅的威布尔斜率的异常现象。对于薄氧化物(1.8nmOXBD),通过考虑价带电子隧道效应,发现其Weibull斜率与非场效应管的斜率非常吻合。对于超薄氧化物(T - OXBD)的结果与厚氧化物的结果基本一致
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A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode
Breakdown (BD) characteristics and electron transport across thin SiO2 films has been thoroughly investigated for P+Poly-Si gate/PFET devices stressed under inversion mode. We resolve the anomalies in TBD/QBD polarity dependence and shallower Weibull slopes commonly observed in PFET for TOX>2nm. For thin oxides (1.8nmOX<2.9nm), QBD data and Weibull slopes are found to be in excellent agreement with those of NFETs by considering valence-band electron tunneling. For ultra-thin oxides (T OX<1.8nm), using an improved new BD detection methodology, the derived QBD results show reasonable agreement with those of thick oxides
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