{"title":"倒置模式下P+Poly/ pfet栅极氧化物击穿的综合研究","authors":"E. Wu, J. Suñé, W. Lai, A. Vayshenker, D. Harmon","doi":"10.1109/IEDM.2005.1609361","DOIUrl":null,"url":null,"abstract":"Breakdown (BD) characteristics and electron transport across thin SiO<sub>2</sub> films has been thoroughly investigated for P+Poly-Si gate/PFET devices stressed under inversion mode. We resolve the anomalies in T<sub>BD</sub>/Q<sub>BD</sub> polarity dependence and shallower Weibull slopes commonly observed in PFET for T<sub>OX</sub>>2nm. For thin oxides (1.8nm<T<sub>OX</sub><2.9nm), Q<sub>BD</sub> data and Weibull slopes are found to be in excellent agreement with those of NFETs by considering valence-band electron tunneling. For ultra-thin oxides (T <sub>OX</sub><1.8nm), using an improved new BD detection methodology, the derived Q<sub>BD</sub> results show reasonable agreement with those of thick oxides","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"57 1","pages":"396-399"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode\",\"authors\":\"E. Wu, J. Suñé, W. Lai, A. Vayshenker, D. Harmon\",\"doi\":\"10.1109/IEDM.2005.1609361\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Breakdown (BD) characteristics and electron transport across thin SiO<sub>2</sub> films has been thoroughly investigated for P+Poly-Si gate/PFET devices stressed under inversion mode. We resolve the anomalies in T<sub>BD</sub>/Q<sub>BD</sub> polarity dependence and shallower Weibull slopes commonly observed in PFET for T<sub>OX</sub>>2nm. For thin oxides (1.8nm<T<sub>OX</sub><2.9nm), Q<sub>BD</sub> data and Weibull slopes are found to be in excellent agreement with those of NFETs by considering valence-band electron tunneling. For ultra-thin oxides (T <sub>OX</sub><1.8nm), using an improved new BD detection methodology, the derived Q<sub>BD</sub> results show reasonable agreement with those of thick oxides\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"57 1\",\"pages\":\"396-399\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609361\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609361","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode
Breakdown (BD) characteristics and electron transport across thin SiO2 films has been thoroughly investigated for P+Poly-Si gate/PFET devices stressed under inversion mode. We resolve the anomalies in TBD/QBD polarity dependence and shallower Weibull slopes commonly observed in PFET for TOX>2nm. For thin oxides (1.8nmOX<2.9nm), QBD data and Weibull slopes are found to be in excellent agreement with those of NFETs by considering valence-band electron tunneling. For ultra-thin oxides (T OX<1.8nm), using an improved new BD detection methodology, the derived QBD results show reasonable agreement with those of thick oxides
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