高温下单电子通过单一供体的传递

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243293

E. Hamid, D. Moraru, T. Mizuno, M. Tabe

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引用次数: 0

摘要

我们发现，在纳米级掺杂的sofet中，随着温度的升高，可以观察到新的电流峰。对于最小的单盘器件，即使在T = 100 K时也观察到一个最终的新的隧道电流峰值，这表明这种模式通道器件适合高温隧道操作。由于介电和约束效应，估计其电离能约为体硅的5倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single-electron transport through a single donor at elevated temperatures

We showed that, in nanoscale doped SOIFETs, new current peaks become observable as temperature is increased. For smallest 1-disk devices, a final new tunneling current peak has been observed even at T = 100 K, indicating that such patterned-channel devices are suitable for high temperature tunneling operation. Ionization energy was estimated to be about 5 times larger than for bulk Si, due to dielectric and confinement effect.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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