{"title":"AMR传感器各向异性场的测量","authors":"J. Ouyang, S. Chen, Y. Zhang, F. Jin, X. Yang","doi":"10.1109/EDSSC.2011.6117748","DOIUrl":null,"url":null,"abstract":"Crossfield effect of anisotropic magnetoresistive (AMR) sensors is an unwanted response to magnetic fields perpendicular to the sensitive axis. For example, the crossfield error of Honeywell HMC1002 sensors could reach 1100 nT in geomagnetic environment [1]. The cause of the effect is that crossfields could change the direction of magnetization in AMR film, which results in variation of magnetoresistance.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Measurement of the anisotropy fields for AMR sensors\",\"authors\":\"J. Ouyang, S. Chen, Y. Zhang, F. Jin, X. Yang\",\"doi\":\"10.1109/EDSSC.2011.6117748\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Crossfield effect of anisotropic magnetoresistive (AMR) sensors is an unwanted response to magnetic fields perpendicular to the sensitive axis. For example, the crossfield error of Honeywell HMC1002 sensors could reach 1100 nT in geomagnetic environment [1]. The cause of the effect is that crossfields could change the direction of magnetization in AMR film, which results in variation of magnetoresistance.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117748\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117748","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurement of the anisotropy fields for AMR sensors
Crossfield effect of anisotropic magnetoresistive (AMR) sensors is an unwanted response to magnetic fields perpendicular to the sensitive axis. For example, the crossfield error of Honeywell HMC1002 sensors could reach 1100 nT in geomagnetic environment [1]. The cause of the effect is that crossfields could change the direction of magnetization in AMR film, which results in variation of magnetoresistance.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
