H. Yu, J.D. Chen, M. Li, S.J. Lee, D. Kwong, M. V. van Dal, J. Kittl, A. Lauwers, E. Augendre, S. Kubicek, C. Zhao, H. Bender, B. Brijs, L. Geenen, A. Benedetti, P. Absil, M. Jurczak, S. Biesemans
{"title":"Yb掺杂对Ni FUSI工作函数的调制:从中隙到n型带边","authors":"H. Yu, J.D. Chen, M. Li, S.J. Lee, D. Kwong, M. V. van Dal, J. Kittl, A. Lauwers, E. Augendre, S. Kubicek, C. Zhao, H. Bender, B. Brijs, L. Geenen, A. Benedetti, P. Absil, M. Jurczak, S. Biesemans","doi":"10.1109/IEDM.2005.1609429","DOIUrl":null,"url":null,"abstract":"The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ~4.72 eV) to n-type band-edge (~4.22 eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45 nm and beyond in a manufacturable way","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"46 1","pages":"630-633"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge\",\"authors\":\"H. Yu, J.D. Chen, M. Li, S.J. Lee, D. Kwong, M. V. van Dal, J. Kittl, A. Lauwers, E. Augendre, S. Kubicek, C. Zhao, H. Bender, B. Brijs, L. Geenen, A. Benedetti, P. Absil, M. Jurczak, S. Biesemans\",\"doi\":\"10.1109/IEDM.2005.1609429\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ~4.72 eV) to n-type band-edge (~4.22 eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45 nm and beyond in a manufacturable way\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"46 1\",\"pages\":\"630-633\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609429\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge
The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ~4.72 eV) to n-type band-edge (~4.22 eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45 nm and beyond in a manufacturable way