{"title":"用高时间分辨I-V测量方法检测MoS 2 FET中的电子捕获/去捕获","authors":"K. Taniguchi","doi":"10.7567/ssdm.2017.ps-13-22","DOIUrl":null,"url":null,"abstract":"For exploring the origin for the interface states in MoS2 FET, the transient response of MOS capacitor to ultra-fast pulsed top gate voltage was studied with high time resolution current measurement system. The difference of time constant originated from trapping and detrapping of electrons on interface states was detected, which cannot be measured in C-V measurement.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"24 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Detection of electron trapping/detrapping in MoS 2 FET by high time-resolved I-V measurement\",\"authors\":\"K. Taniguchi\",\"doi\":\"10.7567/ssdm.2017.ps-13-22\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For exploring the origin for the interface states in MoS2 FET, the transient response of MOS capacitor to ultra-fast pulsed top gate voltage was studied with high time resolution current measurement system. The difference of time constant originated from trapping and detrapping of electrons on interface states was detected, which cannot be measured in C-V measurement.\",\"PeriodicalId\":22504,\"journal\":{\"name\":\"The Japan Society of Applied Physics\",\"volume\":\"24 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Japan Society of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7567/ssdm.2017.ps-13-22\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/ssdm.2017.ps-13-22","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Detection of electron trapping/detrapping in MoS 2 FET by high time-resolved I-V measurement
For exploring the origin for the interface states in MoS2 FET, the transient response of MOS capacitor to ultra-fast pulsed top gate voltage was studied with high time resolution current measurement system. The difference of time constant originated from trapping and detrapping of electrons on interface states was detected, which cannot be measured in C-V measurement.
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