热载流子诱导的si基n沟道LDMOS断态泄漏电流急剧下降

The Japan Society of Applied Physics Pub Date : 2017-08-08 DOI:10.7567/SSDM.2017.PS-3-13

Keita Takahashi, K. Komatsu, Toshihiro Sakamoto, K. Kimura, F. Matsuoka

{"title":"热载流子诱导的si基n沟道LDMOS断态泄漏电流急剧下降","authors":"Keita Takahashi, K. Komatsu, Toshihiro Sakamoto, K. Kimura, F. Matsuoka","doi":"10.7567/SSDM.2017.PS-3-13","DOIUrl":null,"url":null,"abstract":"Abstract In this paper, hot-carrier (HC) induced drastic off-state leakage current (Ioff) degradation for the LDMOS is found and the mechanism is also investigated in detail. Continuous on-state drain current flow of the LDMOS generates the HC which is trapped in the STI, and causes the drastic increase of the Ioff for the LDMOS. Therefore, HC induced drastic Ioff increase should be taken into account for the LDMOS design.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"508 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS\",\"authors\":\"Keita Takahashi, K. Komatsu, Toshihiro Sakamoto, K. Kimura, F. Matsuoka\",\"doi\":\"10.7567/SSDM.2017.PS-3-13\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract In this paper, hot-carrier (HC) induced drastic off-state leakage current (Ioff) degradation for the LDMOS is found and the mechanism is also investigated in detail. Continuous on-state drain current flow of the LDMOS generates the HC which is trapped in the STI, and causes the drastic increase of the Ioff for the LDMOS. Therefore, HC induced drastic Ioff increase should be taken into account for the LDMOS design.\",\"PeriodicalId\":22504,\"journal\":{\"name\":\"The Japan Society of Applied Physics\",\"volume\":\"508 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Japan Society of Applied Physics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7567/SSDM.2017.PS-3-13\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Japan Society of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7567/SSDM.2017.PS-3-13","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

摘要本文发现了热载流子(HC)引起的LDMOS的断态漏电流(Ioff)急剧下降，并对其机理进行了详细的研究。LDMOS的持续导通漏电流产生的HC被困在STI中，导致LDMOS的Ioff急剧增加。因此，在设计LDMOS时应考虑到HC引起的剧烈的off增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Hot-carrier Induced Drastic Off-state Leakage Current Degradation in STI-based N-channel LDMOS

Abstract In this paper, hot-carrier (HC) induced drastic off-state leakage current (Ioff) degradation for the LDMOS is found and the mechanism is also investigated in detail. Continuous on-state drain current flow of the LDMOS generates the HC which is trapped in the STI, and causes the drastic increase of the Ioff for the LDMOS. Therefore, HC induced drastic Ioff increase should be taken into account for the LDMOS design.

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The Japan Society of Applied Physics

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