Xie Sheng, C. Zhiming, Yu Xin, Zhang Shilin, Li Xianjie, Chen Yan, Guo Weilian, Qi Lifang, Mao Luhong, Yu Jinlong
{"title":"ICP刻蚀对基于inp的多量子阱微环激光器的影响","authors":"Xie Sheng, C. Zhiming, Yu Xin, Zhang Shilin, Li Xianjie, Chen Yan, Guo Weilian, Qi Lifang, Mao Luhong, Yu Jinlong","doi":"10.1109/EDSSC.2011.6117681","DOIUrl":null,"url":null,"abstract":"Dry etching of InP-based epitaxial structure was performed by using inductively coupled plasma (ICP) system with different chemistries. The surface topographies shown that the waveguide profiles etched using the Cl2/CH4/Ar recipe have better surface and sidewall quality than that of the Cl2/BCl3 chemistry. To verify the practical influence of ICP etching, InP/AlGaInAs multiple quantum wells microring lasers were fabricated, and the electrical and optical properties were compared. The experimental results revealed that the Cl2/CH4/Ar recipe is preferable to the fabrication of InP-based optoelectronic devices in our experimental system.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Effect of ICP etching on InP-based multiple quantum wells microring lasers\",\"authors\":\"Xie Sheng, C. Zhiming, Yu Xin, Zhang Shilin, Li Xianjie, Chen Yan, Guo Weilian, Qi Lifang, Mao Luhong, Yu Jinlong\",\"doi\":\"10.1109/EDSSC.2011.6117681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dry etching of InP-based epitaxial structure was performed by using inductively coupled plasma (ICP) system with different chemistries. The surface topographies shown that the waveguide profiles etched using the Cl2/CH4/Ar recipe have better surface and sidewall quality than that of the Cl2/BCl3 chemistry. To verify the practical influence of ICP etching, InP/AlGaInAs multiple quantum wells microring lasers were fabricated, and the electrical and optical properties were compared. The experimental results revealed that the Cl2/CH4/Ar recipe is preferable to the fabrication of InP-based optoelectronic devices in our experimental system.\",\"PeriodicalId\":6363,\"journal\":{\"name\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference of Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2011.6117681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of ICP etching on InP-based multiple quantum wells microring lasers
Dry etching of InP-based epitaxial structure was performed by using inductively coupled plasma (ICP) system with different chemistries. The surface topographies shown that the waveguide profiles etched using the Cl2/CH4/Ar recipe have better surface and sidewall quality than that of the Cl2/BCl3 chemistry. To verify the practical influence of ICP etching, InP/AlGaInAs multiple quantum wells microring lasers were fabricated, and the electrical and optical properties were compared. The experimental results revealed that the Cl2/CH4/Ar recipe is preferable to the fabrication of InP-based optoelectronic devices in our experimental system.
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